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Register a new userLarge Spin Pumping from Epitaxial Y3Fe5O12 Thin Films to Pt and W Layers
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Epitaxial Y3Fe5O12 thin films have been deposited by off-axis sputtering, which exhibit excellent crystalline quality, enabling observation of large spin pumping signals in Pt/Y3Fe5O12 and W/Y3Fe5O12 bilayers driven by cavity ferromagnetic resonance. The inverse spin Hall voltages reach 2.10 mV and -5.26 mV in 5-mm long Pt/Y3Fe5O12 and W/Y3Fe5O12 bilayers, respectively, excited by a radio-frequency magnetic field of 0.3 Oe. From the ferromagnetic resonance linewidth broadening, the interfacial spin mixing conductance of 4.56E14 {Omega}-1m-2 and 2.30E14 {Omega}-1m-2 are obtained for Pt/Y3Fe5O12 and W/Y3Fe5O12 bilayers, respectively.
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We experimentally investigate spin-orbit torque and spin pumping in Y$_3$Fe$_5$O$_{12}$(YIG)/Pt bilayers with ultrathin insertion layers at the interface. An insertion layer of Cu suppresses both spin-orbit torque and spin pumping, whereas an insertion layer of Ni$_{80}$Fe$_{20}$ (permalloy, Py) enhances them, in a quantitatively consistent manner with the reciprocity of the two spin transmission processes. However, we observe a large enhancement of Gilbert damping with the insertion of Py that cannot be accounted for solely by spin pumping, suggesting significant spin-memory loss due to the interfacial magnetic layer. Our findings indicate that the magnetization at the YIG-metal interface strongly influences the transmission and depolarization of pure spin current.
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. The three-dimensional angular dependence of the SMR can be explained by a model considering the reversible field-induced redistribution of magnetostrictive antiferromagnetic S- and T-domains in the NiO(001), stemming from the competition between the Zeeman energy and the elastic clamping effect of the non-magnetic MgO substrate. From the observed SMR ratio, we estimate the spin mixing conductance at the NiO/Pt interface to be greater than $2times10^{14}$ ${Omega}^{-1}$ $m^{-2}$. Our results demonstrate the possibility to electrically detect the Neel vector direction in stable NiO(001) thin films, for rotations in the xy- and xz- planes. Moreover, we show that a careful subtraction of the ordinary magnetoresistance contribution is crucial to correctly estimate the amplitude of the SMR.
We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y3Fe5O12 in a wide temperature (0.46-300 K) and magnetic-field (-15-15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y3Fe5O12. Hall resistance in the Pt film is also affected by Y3Fe5O12, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y3Fe5O12.
We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin diffusion length and the spin Hall angle in NbN to be 14 nm and -1.1 10-2, respectively. Furthermore, we have determined the spin-mixing conductance of the NbN/YIG interface to be 10 nm-2. The experimental quantification of these spin transport parameters is an important step towards the development of superconducting spintronic devices involving NbN thin films.
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