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Register a new userSpin transport parameters of NbN thin films characterised by spin pumping experiments
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Konstantinos Rogdakis
Publication date
2019
fields
Physics
and research's language is
English
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We present measurements of ferromagnetic-resonance - driven spin pumping and inverse spin-Hall effect in NbN/Y3Fe5O12 (YIG) bilayers. A clear enhancement of the (effective) Gilbert damping constant of the thin-film YIG was observed due to the presence of the NbN spin sink. By varying the NbN thickness and employing spin-diffusion theory, we have estimated the room temperature values of the spin diffusion length and the spin Hall angle in NbN to be 14 nm and -1.1 10-2, respectively. Furthermore, we have determined the spin-mixing conductance of the NbN/YIG interface to be 10 nm-2. The experimental quantification of these spin transport parameters is an important step towards the development of superconducting spintronic devices involving NbN thin films.
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We theoretically investigate a manipulation method of nonequilibrium spin accumulation in the paramagnetic normal metal of a spin pumping system, by using the spin precession motion combined with the spin diffusion transport. We demonstrate based on the Bloch-Torrey equation that the direction of the nonequilibrium spin accumulation is changed by applying an additional external magnetic field, and consequently, the inverse spin Hall voltage in an adjacent paramagnetic heavy metal changes its sign. We find that the spin relaxation time and the spin diffusion length are simultaneously determined by changing the magnitude of the external magnetic field and the thickness of the normal metal in a commonly-used spin pumping system.
We report a study on spin conductance in ultra-thin films of Yttrium Iron Garnet (YIG), where spin transport is provided by propagating spin waves, that are generated and detected by direct and inverse spin Hall effects in two Pt wires deposited on top. While at low current the spin conductance is dominated by transport of thermal magnons, at high current, the spin conductance is dominated by low-damping non-equilibrium magnons thermalized near the spectral bottom by magnon-magnon interaction, with consequent a sensitivity to the applied magnetic field and a longer decay length. This picture is supported by microfocus Brillouin Light Scattering spectroscopy.
We report spin-to-charge and charge-to-spin conversion at room temperature in heterostructure devices that interface an archetypal Dirac semimetal, Cd3As2, with a metallic ferromagnet, Ni0.80Fe0.20 (permalloy). The spin-charge interconversion is detected by both spin torque ferromagnetic resonance and ferromagnetic resonance driven spin pumping. Analysis of the symmetric and anti-symmetric components of the mixing voltage in spin torque ferromagnetic resonance and the frequency and power dependence of the spin pumping signal show that the behavior of these processes is consistent with previously reported spin-charge interconversion mechanisms in heavy metals, topological insulators, and Weyl semimetals. We find that the efficiency of spin-charge interconversion in Cd3As2/permalloy bilayers can be comparable to that in heavy metals. We discuss the underlying mechanisms by comparing our results with first principles calculations.
We have measured the inverse spin Hall effect (ISHE) in textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $approx$0.001.
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