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Register a new userCharacteristic Sign Change of the Magnetoresistance of Strongly Correlated GaAs Two-dimensional Holes
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High quality strongly correlated two-dimensional (2D) electron systems at low temperatures $Trightarrow 0$ exhibits an apparent metal-to-insulator transition (MIT) at a large $r_s$ value around 40. We have measured the magnetoresistance of 2D holes in weak perpendicular magnetic field in the vicinity of the transition for a series of carrier densities ranging from $0.2-1.5times10^{10}$ $cm^{-2}$. The sign of the magnetoresistance is found to be charge density dependent: in the direction of decreasing density, the sign changes from being positive to negative across a characteristic value that coincides with the critical density of MIT.
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We report an universal behaviour of hopping transport in strongly interacting mesoscopic two-dimensional electron systems (2DES). In a certain window of background disorder, the resistivity at low perpendicular magnetic fields follows the expected relation $rho(B_perp) = rho_{rm{B}}exp(alpha B_perp^2)$. The prefactor $rho_{rm{B}}$ decreases exponentially with increasing electron density but saturates to a finite value at higher densities. Strikingly, this value is found to be universal when expressed in terms of absolute resistance and and shows quantisation at $R_{rm{B}}approx h/e^2$ and $R_{rm{B}}approx 1/2$ $ h/e^2$. We suggest a strongly correlated electronic phase as a possible explanation.
Spin Hall magnetoresistance (SMR) has been investigated in Pt/NiO/YIG structures in a wide range of temperature and NiO thickness. The SMR shows a negative sign below a temperature which increases with the NiO thickness. This is contrary to a conventional SMR theory picture applied to Pt/YIG bilayer which always predicts a positive SMR. The negative SMR is found to persist even when NiO blocks the spin transmission between Pt and YIG, indicating it is governed by the spin current response of NiO layer. We explain the negative SMR by the NiO spin-flop coupled with YIG, which can be overridden at higher temperatures by positive SMR contribution from YIG. This highlights the role of magnetic structure in antiferromagnets for transport of pure spin current in multilayers.
We report effective hole mass ($m^{*}$) measurements through analyzing the temperature dependence of Shubnikov-de Haas oscillations in dilute (density $p sim 7 times 10^{10}$ cm$^{-2}$, $r_{s} sim 6$) two-dimensional (2D) hole systems confined to a 20 nm-wide, (311)A GaAs quantum well. The holes in this system occupy two nearly-degenerate spin subbands whose $m^{*}$ we measure to be $sim $ 0.2 (in units of the free electron mass). Despite the relatively large $r_{s}$ in our 2D system, the measured $m^{*}$ is in good agreement with the results of our energy band calculations which do not take interactions into account. We hen apply a sufficiently strong parallel magnetic field to fully depopulate one of the spin subbands, and measure $m^{*}$ for the populated subband. We find that this latter $m^{*}$ is surprisingly close to the $m^{*}$ we measure in the absence of the parallel field. We also deduce the spin susceptibility of the 2D hole system from the depopulation field, and conclude that the susceptibility is enhanced by about 50% relative to the value expected from the band calculations.
At low temperatures, in very clean two-dimensional (2D) samples the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature- and size dependent. Our analysis demonstrates that the viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultra-high-mobility GaAs quantum wells. We conclude that 2D electrons in that structures in moderate magnetic fields should be treated as a viscous fluid.
We develop a theory of magnetoresistance of two-dimensional electron systems in a smooth disorder potential in the hydrodynamic regime. Our theory applies to two-dimensional semiconductor structures with strongly correlated carriers when the mean free path due to electron-electron collisions is sufficiently short. The dominant contribution to magnetoresistance arises from the modification of the flow pattern by the Lorentz force, rather than the magnetic field dependence of the kinetic coefficients of the electron liquid. The resulting magnetoresistance is positive and quadratic at weak fields. Although the resistivity is governed by both viscosity and thermal conductivity of the electron fluid, the magnetoresistance is controlled by the viscosity only. This enables extraction of viscosity of the electron liquid from magnetotransport measurements.
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