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Register a new userElectron-phonon coupling-induced kinks in the sigma band of graphene
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Justin Wells Justin Wells
Publication date
2013
fields
Physics
and research's language is
English
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Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $sigma$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cut-off in the density of $sigma$ states. The existence of the effect suggests a very weak coupling of holes in the $sigma$ band not only to the $pi$ electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of lambda=1.
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First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the $sigma$ band with $lambda$ values of up to 0.9. Near the top of the $sigma$ band, $lambda$ is found to be $approx 0.7$. This value is consistent with the recently observed kinks in the $sigma$ band dispersion by angle-resolved photoemission. While the photoemission intensity from the $sigma$ band is strongly influenced by matrix elements due to sub-lattice interference, these effects differ significantly for data taken in the first and neighboring Brillouin zones. This can be exploited to disentangle the influence of matrix elements and electron-phonon coupling. A rigorous analysis of the experimentally determined complex self-energy using Kramers-Kronig transformations further supports the assignment of the observed kinks to strong electron-phonon coupling and yields a coupling constant of $0.6(1)$, in excellent agreement with the calculations.
Interfacial electron-phonon coupling in ultrathin films has attracted much interest; it can give rise to novel effects and phenomena, including enhanced superconductivity. Here we report an observation of strong kinks in the energy dispersions of quantum well states in ultrathin Yb films grown on graphite. These kinks, arising from interfacial electron-phonon coupling, are most prominent for films with a preferred (magic) thickness of 4 monolayers, which are strained and hole doped by the substrate. The energy position of the kinks agrees well with the optical phonon energy of graphite, and the extracted electron-phonon coupling strength {lambda} shows a large subband dependence, with a maximum value up to 0.6. The kinks decay rapidly with increasing film thickness, consistent with its interfacial origin. The variation of {lambda} is correlated with evolution of the electronic wave function amplitudes at the interface. A Lifshitz transition occurs just beyond the magic thickness where the heavy Yb 5d bands begin to populate right below the Fermi level.
Recent experiments have shown surprisingly large thermal time constants in suspended graphene ranging from 10 to 100 ns in drums with a diameter ranging from 2 to 7 microns. The large time constants and their scaling with diameter points towards a thermal resistance at the edge of the drum. However, an explanation of the microscopic origin of this resistance is lacking. Here, we show how phonon scattering at a kink in the graphene, e.g. formed by sidewall adhesion at the edge of the suspended membrane, can cause a large thermal time constant. This kink strongly limits the fraction of flexural phonons that cross the suspended graphene edge, which causes a thermal interface resistance at its boundary. Our model predicts thermal time constants that are of the same order of magnitude as experimental data, and shows a similar dependence on the circumference. Furthermore, the model predicts the relative in-plane and out-of-plane phonon contributions to graphenes thermal expansion force, in agreement with experiments. We thus show, that in contrast to conventional thermal (Kapitza) resistance which occurs between two different materials, in 2D materials another type of thermal interface resistance can be geometrically induced in a single material.
Using electrical transport experiments and shot noise thermometry, we investigate electron-phonon heat transfer rate in a suspended bilayer graphene. Contrary to monolayer graphene with heat flow via three-body supercollision scattering, we find that regular electron - optical phonon scattering in bilayer graphene provides the dominant scattering process at electron energies $ gtrsim 0.15$ eV. We determine the strength of these intrinsic heat flow processes of bilayer graphene and find good agreement with theoretical estimates when both zone edge and zone center optical phonons are taken into account.
Using electrical transport experiments and shot noise thermometry, we find strong evidence that supercollision scattering processes by flexural modes are the dominant electron-phonon energy transfer mechanism in high-quality, suspended graphene around room temperature. The power law dependence of the electron-phonon coupling changes from cubic to quintic with temperature. The change of the temperature exponent by two is reflected in the quadratic dependence on chemical potential, which is an inherent feature of two-phonon quantum processes.
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