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Register a new userNon-perturbative laser effects on the electrical properties of graphene nanoribbons
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The use of Floquet theory combined with a realistic description of the electronic structure of illuminated graphene and graphene nanoribbons is developed to assess the emergence of non-adiabatic and non-perturbative effects on the electronic properties. Here, we introduce an efficient computational scheme and illustrate its use by applying it to graphene nanoribbons in the presence of both linear and circular polarization. The interplay between confinement due to the finite sample size and laser-induced transitions is shown to lead to sharp features on the average conductance and density of states. Particular emphasis is given to the emergence of the bulk limit response.
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We study the interplay between lateral confinement and photon-induced processes on the electronic properties of illuminated graphene nanoribbons. We find that by tuning the device setup (edges geometries, ribbon width and polarization direction), a laser with frequency {Omega} may either not affect the electronic structure, or induce bandgaps or depletions at hbar {Omega}/2, and/or at other energies not commensurate with half the photon energy. Similar features are also observed in the dc conductance, suggesting the use of the polarization direction to switch on and off the graphene device. Our results could guide the design of novel types of optoelectronic nano-devices.
We study the transport of charge carriers through finite graphene structures. The use of numerical exact kernel polynomial and Green function techniques allows us to treat actual sized samples beyond the Dirac-cone approximation. Particularly we investigate disordered nanoribbons, normal-conductor/graphene interfaces and normal-conductor/graphene/normal-conductor junctions with a focus on the behavior of the local density of states, single-particle spectral function, optical conductivity and conductance. We demonstrate that the contacts and bulk disorder will have a major impact on the electronic properties of graphene-based devices.
Atomic collapse in graphene nanoribbons behaves in a fundamentally different way as compared to monolayer graphene, due to the presence of multiple energy bands and the effect of edges. For armchair nanoribbons we find that bound states gradually transform into atomic collapse states with increasing impurity charge. This is very different in zig-zag nanoribbons where multiple quasi-one-dimensional emph{bound states} are found that originates from the zero energy zig-zag edge states. They are a consequence of the flat band and the electron distribution of these bound states exhibits two peaks. The lowest energy edge state transforms from a bound state into an atomic collapse resonance and shows a distinct relocalization from the edge to the impurity position with increasing impurity charge.
Quantum-dot states in graphene nanoribbons (GNR) were calculated using density-functional theory, considering the effect of the electric field of gate electrodes. The field is parallel to the GNR plane and was generated by an inhomogeneous charge sheet placed atop the ribbon. Varying the electric field allowed to observe the development of the GNR states and the formation of localized, quantum-dot-like states in the band gap. The calculation has been performed for armchair GNRs and for armchair ribbons with a zigzag section. For the armchair GNR a static dielectric constant of {epsilon} approx. 4 could be determined.
An intense laser field in the high-frequency regime drives carriers in graphene nanoribbons (GNRs) out of equilibrium and creates topologically-protected edge states. Using Floquet theory on driven GNRs, we calculate the time evolution of local excitations of these edge states and show that they exhibit a robust dynamics also in the presence of very localized lattice defects (atomic vacancies), which is characteristic of topologically non-trivial behavior. We show how it is possible to control them by a modulated electrostatic potential: They can be fully transmitted on the same edge, reflected on the opposite one, or can be split between the two edges, in analogy with Hall edge states, making them promising candidates for flying-qubit architectures.
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