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Register a new userConfinement and edge effects on atomic collapse in graphene nanoribbons
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Atomic collapse in graphene nanoribbons behaves in a fundamentally different way as compared to monolayer graphene, due to the presence of multiple energy bands and the effect of edges. For armchair nanoribbons we find that bound states gradually transform into atomic collapse states with increasing impurity charge. This is very different in zig-zag nanoribbons where multiple quasi-one-dimensional emph{bound states} are found that originates from the zero energy zig-zag edge states. They are a consequence of the flat band and the electron distribution of these bound states exhibits two peaks. The lowest energy edge state transforms from a bound state into an atomic collapse resonance and shows a distinct relocalization from the edge to the impurity position with increasing impurity charge.
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We report on nano-infrared (IR) imaging studies of confined plasmon modes inside patterned graphene nanoribbons (GNRs) fabricated with high-quality chemical-vapor-deposited (CVD) graphene on Al2O3 substrates. The confined geometry of these ribbons leads to distinct mode patterns and strong field enhancement, both of which evolve systematically with the ribbon width. In addition, spectroscopic nano-imaging in mid-infrared 850-1450 cm-1 allowed us to evaluate the effect of the substrate phonons on the plasmon damping. Furthermore, we observed edge plasmons: peculiar one-dimensional modes propagating strictly along the edges of our patterned graphene nanostructures.
A theoretical study of the magnetoelectronic properties of zigzag and armchair bilayer graphene nanoribbons (BGNs) is presented. Using the recursive Greens function method, we study the band structure of BGNs in uniform perpendicular magnetic fields and discuss the zero-temperature conductance for the corresponding clean systems. The conductance quantized as 2(n+1)G_ for the zigzag edges and nG_0 for the armchair edges with G_{0}=2e^2/h being the conductance unit and $n$ an integer. Special attention is paid to the effects of edge disorder. As in the case of monolayer graphene nanoribbons (GNR), a small degree of edge disorder is already sufficient to induce a transport gap around the neutrality point. We further perform comparative studies of the transport gap E_g and the localization length in bilayer and monolayer nanoribbons. While for the GNRs E_{g}^{GNR}is proportional to 1/W, the corresponding transport gap E_{g}^{BGN} for the bilayer ribbons shows a more rapid decrease as the ribbon width W is increased. We also demonstrate that the evolution of localization lengths with the Fermi energy shows two distinct regimes. Inside the transport gap, xi is essentially independent on energy and the states in the BGNs are significantly less localized than those in the corresponding GNRs. Outside the transport gap xi grows rapidly as the Fermi energy increases and becomes very similar for BGNs and GNRs.
We study the transport of charge carriers through finite graphene structures. The use of numerical exact kernel polynomial and Green function techniques allows us to treat actual sized samples beyond the Dirac-cone approximation. Particularly we investigate disordered nanoribbons, normal-conductor/graphene interfaces and normal-conductor/graphene/normal-conductor junctions with a focus on the behavior of the local density of states, single-particle spectral function, optical conductivity and conductance. We demonstrate that the contacts and bulk disorder will have a major impact on the electronic properties of graphene-based devices.
The magnetoconductance of graphene nanoribbons with rough zigzag and armchair edges is studied by numerical simulations. nanoribbons with sufficiently small bulk disorder show a pronounced magnetoconductance minimum at cyclotron radii close to the ribbon width, in close analogy to the wire peak observed in conventional semiconductor quantum wires. In zigzag nanoribbons, this feature becomes visible only above a threshold amplitude of the edge roughness, as a consequence of the reduced current density close to the edges.
We prescribe general rules to predict the existence of edge states and zero-energy flat bands in graphene nanoribbons and graphene edges of arbitrary shape. No calculations are needed. For the so-called {it{minimal}} edges, the projection of the edge translation vector into the zigzag direction of graphene uniquely determines the edge bands. By adding extra nodes to minimal edges, arbitrary modified edges can be obtained. The edge bands of modified graphene edges can be found by applying hybridization rules of the extra atoms with the ones belonging to the original edge. Our prescription correctly predicts the localization and degeneracy of the zero-energy bands at one of the graphene sublattices, confirmed by tight-binding and first-principle calculations. It also allows us to qualitatively predict the existence of $E e 0$ bands appearing in the energy gap of certain edges and nanoribbons.
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