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Register a new userAnisotropic Zeeman splitting in p-type GaAs quantum point contacts
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Low-temperature electrical conductance spectroscopy measurements of quantum point contacts implemented in p-type GaAs/AlGaAs heterostructures are used to study the Zeeman splitting of 1D subbands for both in-plane and out-of-plane magnetic field orientations. The resulting in-plane g-factors agree qualitatively with those of previous experiments on quantum wires while the quantitative differences can be understood in terms of the enhanced quasi-1D confinement anisotropy. The influence of confinement potential on the anisotropy is discussed and an estimate for the out-of-plane g-factor is obtained which, in contrast to previous experiments, is closer to the theoretical prediction.
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The strength of the Zeeman splitting induced by an applied magnetic field is an important factor for the realization of spin-resolved transport in mesoscopic devices. We measure the Zeeman splitting for a quantum point contact etched into a Ga0.25In0.75As quantum well, with the field oriented parallel to the transport direction. We observe an enhancement of the Lande g-factor from |g*|=3.8 +/- 0.2 for the third subband to |g*|=5.8 +/- 0.6 for the first subband, six times larger than in GaAs. We report subband spacings in excess of 10 meV, which facilitates quantum transport at higher temperatures.
Strong spin-orbit interaction characteristic for p-type GaAs systems, makes such systems promising for the realization of spintronic devices. Here we report on transport measurements in nanostructures fabricated on p-type, C-doped GaAs heterostructures by scanning probe oxidation lithography. We observe conductance quantization in a quantum point contact, as well as pronounced Coulomb resonances in two quantum dots with different geometries. Charging energies for both dots, extracted from Coulomb diamond measurements are in agreement with the lithographic dimensions of the dots. The absence of excited states in Coulomb diamond measurements indicates that the dots are in the multi-level transport regime.
We study the Zeeman splitting in lateral quantum dots that are defined in GaAs-AlGaAs het- erostructures by means of split gates. We demonstrate a non-linear dependence of the splitting on magnetic field and its substantial variations from dot to dot and from heterostructure to het- erostructure. These phenomena are important in the context of information processing since the tunability and dot-dependence of the Zeeman splitting allow for a selective manipulation of spins. We show that spin-orbit effects related to the GaAs band structure quantitatively explain the ob- served magnitude of the non-linear dependence of the Zeeman splitting. Furthermore, spin-orbit effects result in a dependence of the Zeeman splitting on predominantly the out-of-plane quantum dot confinement energy. We also show that the variations of the confinement energy due to charge disorder in the heterostructure may explain the dependence of Zeeman splitting on the dot position. This position may be varied by changing the gate voltages which leads to an electrically tunable Zeeman splitting.
The Zeeman splitting of the conduction band in the HgTe quantum wells both with normal and inverted spectrum has been studied experimentally in a wide electron density range. The simultaneous analysis of the SdH oscillations in low magnetic fields at different tilt angles and of the shape of the oscillations in moderate magnetic fields gives a possibility to find the ratio of the Zeeman splitting to the orbital one and anisotropy of g-factor. It is shown that the ratios of the Zeeman splitting to the orbital one are close to each other for both types of structures, with a normal and inverted spectrum and they are close enough to the values calculated within kP method. In contrast, the values of g-factor anisotropy in the structures with normal and inverted spectra is strongly different and for both cases differs significantly from the calculated ones. We believe that such disagreement with calculations is a result of the interface inversion asymmetry in the HgTe quantum well, which is not taken into account in the kP calculations.
We have studied the Zeeman splitting in ballistic hole quantum wires formed in a (311)A quantum well by surface gate confinement. Transport measurements clearly show lifting of the spin degeneracy and crossings of the subbands when an in-plane magnetic field B is applied parallel to the wire. When B is oriented perpendicular to the wire, no spin-splitting is discernible up to B = 8.8 T. The observed large Zeeman splitting anisotropy in our hole quantum wires demonstrates the importance of quantum-confinement for spin-splitting in nanostructures with strong spin-orbit coupling.
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