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Register a new userEvidence for a Spin Phase Transition at { u}=0 in Bilayer Graphene
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The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at { u}=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer { u}=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the { u}=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the { u}=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.
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In the recent advancement in Graphene heterostructures, it is possible to create a double layer tunnel decoupled Graphene system which has strong interlayer electronic interaction. In this work, we restrict the parameters in the Hamiltonian using simple symmetry arguments. We study the ground state of this system in the Hartree-Fock approximation at $ u_1= u_2=0$. In addition to the phases found in monolayer Graphene, we found the existence of layer correlated phase which breaks the layer $U(1)$ symmetry. At non-zero Zeeman coupling strength ($E_z$) this layer correlated state has a small magnetization, which vanishes as $E_z$ goes to zero. We discuss the bulk gapless modes using the Goldstone theorem. We also comment on the edge structure for the layer correlated phase.
The Hall-plateau width and the activation energy were measured in the bilayer quantum Hall state at filling factor u=2, 1 and 2/3, by changing the total electron density and the density ratio in the two quantum wells. Their behavior are remarkably different from one to another. The u=1 state is found stable over all measured range of the density difference, while the u=2/3$ state is stable only around the balanced point. The u=2 state, on the other hand, shows a phase transition between these two types of the states as the electron density is changed.
We report on magneto-transport measurements up to 30 T performed on a bilayer graphene Hall bar, enclosed by two thin hexagonal boron nitride flakes. Our high mobility sample exhibits an insulating state at neutrality point which evolves into a metallic phase when a strong in-plane field is applied, as expected for a transition from a canted antiferromagnetic to a ferromagnetic spin ordered phase. For the first time we individuate a temperature-independent crossing in the four-terminal resistance as a function of the total magnetic field, corresponding to the critical point of the transition. We show that the critical field scales linearly with the perpendicular component of the field, as expected from the underlying competition between the Zeeman energy and interaction-induced anisotropies. A clear scaling of the resistance is also found and an universal behavior is proposed in the vicinity of the transition.
Bilayer graphene (BLG) at the charge neutrality point (CNP) is strongly susceptible to electronic interactions, and expected to undergo a phase transition into a state with spontaneous broken symmetries. By systematically investigating a large number of singly- and doubly-gated bilayer graphene (BLG) devices, we show that an insulating state appears only in devices with high mobility and low extrinsic doping. This insulating state has an associated transition temperature Tc~5K and an energy gap of ~3 meV, thus strongly suggesting a gapped broken symmetry state that is destroyed by very weak disorder. The transition to the intrinsic broken symmetry state can be tuned by disorder, out-of-plane electric field, or carrier density.
Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challenging because of its relatively low energy scale ($sim 1$ meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observe additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as a possible evidence of a Lifshitz transition.
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