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Register a new userEvidence of Lifshitz transition in thermoelectric power of ultrahigh mobility bilayer graphene
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Resolving low-energy features in the density of states (DOS) holds the key to understanding wide variety of rich novel phenomena in graphene based 2D heterostructures. Lifshitz transition in bilayer graphene (BLG) arising from trigonal warping has been established theoretically and experimentally. Nevertheless, the experimental realization of its effects on the transport properties has been challenging because of its relatively low energy scale ($sim 1$ meV). In this work, we demonstrate that the thermoelectric power (TEP) can be used as an effective probe to investigate fine changes in the DOS of BLG. We observe additional entropy features in the vicinity of the charge neutrality point (CNP) in gapped BLG. This apparent violation of Mott formula can be explained quantitatively by considering the effects of trigonal warping, thereby serving as a possible evidence of a Lifshitz transition.
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It is shown theoretically that the renormalization of the electron energy spectrum of bilayer graphene with a strong high-frequency electromagnetic field (dressing field) results in the Lifshitz transition - the abrupt change in the topology of the Fermi surface near the band edge. This effect substantially depends on the polarization of the field: The linearly polarized dressing field induces the Lifshitz transition from the quadruply-connected Fermi surface to the doubly-connected one, whereas the circularly polarized field induces the multicritical point, where the four different Fermi topologies may coexist. As a consequence, the discussed phenomenon creates physical basis to control the electronic properties of bilayer graphene with light.
The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing temperature suggests that the suppression of the thermopower is intrinsic to Dirac electrons in graphene.
We derive the renormalization group equations describing all the short-range interactions in bilayer graphene allowed by symmetry and the long range Coulomb interaction. For certain range of parameters, we predict the first order phase transition to the uniaxially deformed gapless state accompanied by the change of the topology of the electron spectrum.
The most celebrated property of the quantum spin Hall effect is the presence of spin-polarized counter-propagating edge states. This novel edge state configuration has also been predicted to occur in graphene when spin-split electron- and hole-like Landau levels are forced to cross at the edge of the sample. In particular, a quantum spin Hall analogue has been predicted at { u}=0 in bilayer graphene if the ground state is a spin ferromagnet. Previous studies have demonstrated that the bilayer { u}=0 state is an insulator in a perpendicular magnetic field, though the exact nature of this state has not been identified. Here we present measurements of the { u}=0 state in a dual-gated bilayer graphene device in tilted magnetic field. The application of an in-plane magnetic field and perpendicular electric field allows us to map out a full phase diagram of the { u}=0 state as a function of experimentally tunable parameters. At large in-plane magnetic field we observe a quantum phase transition to a metallic state with conductance of order 4e^2/h, consistent with predictions for the ferromagnet.
We report pronounced magnetoconductance oscillations observed on suspended bilayer and trilayer graphene devices with mobilities up to 270,000 cm2/Vs. For bilayer devices, we observe conductance minima at all integer filling factors nu between 0 and -8, as well as a small plateau at { u}=1/3. For trilayer devices, we observe features at nu=-1, -2, -3 and -4, and at { u}~0.5 that persist to 4.5K at B=8T. All of these features persist for all accessible values of Vg and B, and could suggest the onset of symmetry breaking of the first few Landau (LL) levels and fractional quantum Hall states.
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