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Register a new userTopological Proximity Effects in Graphene Nanoribbon Heterostructures
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Topological insulators (TI) are bulk insulators that possess robust chiral conducting states along their interfaces with normal insulators. A tremendous research effort has recently been devoted to TI-based heterostructures, in which conventional proximity effects give rise to many exotic physical phenomena. Here we establish the potential existence of topological proximity effects at the interface of a topological graphene nanoribbon (GNR) and a normal GNR. Specifically, we show that the location of the topological edge states exhibits versatile tunability as a function of the interface orientation, as well as the strengths of the interface coupling and spin-orbit coupling in the normal GNR. For zigzag and bearded GNRs, the topological edge state can be tuned to be either at the interface or outer edge of the normal ribbon. For armchair GNR, the potential location of the topological edge state can be further enriched to be at the edge of or within the normal ribbon, at the interface, or diving into the topological GNR. We also discuss potential experimental realization of the predicted topological proximity effects, which may pave the way for integrating the salient functionality of TI and graphene in future device applications.
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Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. In order to engineer practical spintronics applications with such graphene/topological insulator (Gr/TI) heterostructures, an understanding of the hybrid spin-dependent properties is essential. {However to date, despite the large number of experimental studies on Gr/TI heterostructures reporting a great variety of remarkable (spin) transport phenomena, little is known about the true nature of the spin texture of the interface states as well as their role on the measured properties. Here we use {it ab initio} simulations and tight-binding models to determine the precise spin texture of electronic states in graphene interfaced with a Bi$_2$Se$_3$ topological insulator. Our calculations predict the emergence of a giant spin lifetime anisotropy in the graphene layer, which should be a measurable hallmark of spin transport in Gr/TI heterostructures, and suggest novel types of spin devices
Finite graphene nanoribbon (GNR) heterostructures host intriguing topological in-gap states (Rizzo, D. J. et al.~textit{Nature} textbf{2018}, textit{560}, 204]). These states may be localized either at the bulk edges, or at the ends of the structure. Here we show that correlation effects (not included in previous density functional simulations) play a key role in these systems: they result in increased magnetic moments at the ribbon edges accompanied by a significant energy renormalization of the topological end states -- even in the presence of a metallic substrate. Our computed results are in excellent agreement with the experiments. Furthermore, we discover a striking, novel mechanism that causes an energy splitting of the non-zero-energy topological end states for a weakly screened system. We predict that similar effects should be observable in other GNR heterostructures as well.
We reveal a proximity effect between a topological band (Chern) insulator described by a Haldane model and spin-polarized Dirac particles of a graphene layer. Coupling weakly the two systems through a tunneling term in the bulk, the topological Chern insulator induces a gap and an opposite Chern number on the Dirac particles at half-filling resulting in a sign flip of the Berry curvature at one Dirac point. We study different aspects of the bulk-edge correspondence and present protocols to observe the evolution of the Berry curvature as well as two counter-propagating (protected) edge modes with different velocities. In the strong-coupling limit, the energy spectrum shows flat bands. Therefore we build a perturbation theory and address further the bulk-edge correspondence. We also show the occurrence of a topological insulating phase with Chern number one when only the lowest band is filled. We generalize the effect to Haldane bilayer systems with asymmetric Semenoff masses. We propose an alternative definition of the topological invariant on the Bloch sphere.
Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers. Nevertheless, subtle effects may arise due to the differing lattice constants of graphene and hBN, and due to the twist angle between the graphene and hBN lattices. Here, we use a recently developed model which allows us to perform band structure and magnetotransport calculations of such structures, and show that with a proper account of the moire physics an excellent agreement with experiments can be achieved, even for complicated structures such as disordered graphene, or antidot lattices on a monolayer hBN with a relative twist angle. Calculations of this kind are essential to a quantitative modeling of twistronic devices.
The emergence of topological order in graphene is in great demand for the realization of quantum spin Hall states. Recently, it is theoretically proposed that the spin textures of surface states in topological insulator can be directly transferred to graphene by means of proximity effect. Here we report the observations of the topological proximity effect in the graphene-topological insulator Bi2Se3 heterojunctions via magnetotransport measurements. The coupling between the p_z orbitals of graphene and the p orbitals of surface states on the Bi2Se3 bottom surface can be enhanced by applying perpendicular negative magnetic field, resulting in a giant negative magnetoresistance at the Dirac point up to about -91%. An obvious resistivity dip in the transfer curve at the Dirac point is also observed in the hybrid devices, which is consistent with the theoretical predictions of the distorted Dirac bands with unique spin textures inherited from Bi2Se3 surface states.
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