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Register a new userMoir{e} effects in graphene--hBN heterostructures
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Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers. Nevertheless, subtle effects may arise due to the differing lattice constants of graphene and hBN, and due to the twist angle between the graphene and hBN lattices. Here, we use a recently developed model which allows us to perform band structure and magnetotransport calculations of such structures, and show that with a proper account of the moire physics an excellent agreement with experiments can be achieved, even for complicated structures such as disordered graphene, or antidot lattices on a monolayer hBN with a relative twist angle. Calculations of this kind are essential to a quantitative modeling of twistronic devices.
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Second-order nonlinear optical response allows to detect different properties of the system associated with the inversion symmetry breaking. Here, we use a second harmonic generation effect to investigate the alignment of a graphene/hexagonal Boron Nitride heterostructure. To achieve that, we activate a commensurate-incommensurate phase transition by a thermal annealing of the sample. We find that this structural change in the system can be directly observed through a strong modification of a nonlinear optical signal. This result reveals the potential of a second harmonic generation technique for probing structural properties of layered systems.
We study room temperature spin transport in graphene devices encapsulated between a layer-by-layer-stacked two-layer-thick chemical vapour deposition (CVD) grown hexagonal boron nitride (hBN) tunnel barrier, and a few-layer-thick exfoliated-hBN substrate. We find mobilities and spin-relaxation times comparable to that of SiO$_2$ substrate based graphene devices, and obtain a similar order of magnitude of spin relaxation rates for both the Elliott-Yafet and DYakonov-Perel mechanisms. The behaviour of ferromagnet/two-layer-CVD-hBN/graphene/hBN contacts ranges from transparent to tunneling due to inhomogeneities in the CVD-hBN barriers. Surprisingly, we find both positive and negative spin polarizations for high-resistance two-layer-CVD-hBN barrier contacts with respect to the low-resistance contacts. Furthermore, we find that the differential spin injection polarization of the high-resistance contacts can be modulated by DC bias from -0.3 V to +0.3 V with no change in its sign, while its magnitude increases at higher negative bias. These features mark a distinctive spin injection nature of the two-layer-CVD-hBN compared to the bilayer-exfoliated-hBN tunnel barriers.
The specific rotational alignment of two-dimensional lattices results in a moire superlattice with a larger period than the original lattices and allows one to engineer the electronic band structure of such materials. So far, transport signatures of such superlattices have been reported for graphene/hBN and graphene/graphene systems. Here we report moire superlattices in fully hBN encapsulated graphene with both the top and the bottom hBN aligned to the graphene. In the graphene, two different moire superlattices form with the top and the bottom hBN, respectively. The overlay of the two superlattices can result in a third superlattice with a period larger than the maximum period (14 nm) in the graphene/hBN system, which we explain in a simple model. This new type of band structure engineering allows one to artificially create an even wider spectrum of electronic properties in two-dimensional materials.
We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal boron nitride. In samples where the two WSe2 monolayers are rotationally aligned we observe resonant tunneling, manifested by a large conductance and negative differential resistance in the vicinity of zero interlayer bias, which stem from energy- and momentum-conserving tunneling. Because the spin-orbit coupling leads to coupled spin-valley degrees of freedom, the twist between the two WSe2 monolayers allows us to probe the conservation of spin-valley degree of freedom in tunneling. In heterostructures where the two WSe2 monolayers have a 180{deg} relative twist, such that the Brillouin zone of one layer is aligned with the time-reversed Brillouin zone of the opposite layer, the resonant tunneling between the layers is suppressed. These findings provide evidence that in addition to momentum, the spin-valley degree of freedom is also conserved in vertical transport.
In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moir{e} patterns. We show that moir{e} superlattice effects persist in twisted bilayer graphene with large twists and short moir{e} periods. Using angle-resolved photoemission, we observe changes in valence band topology across large parts of the Brillouin zone, including vicinity of the saddle point at M and across over 3 eV from the Dirac points. We also detect signatures of potential secondary Dirac points in the reconstructed dispersions. For twists $theta>21.8^{circ}$, scattering of electrons in one graphene layer on the potential of the other leads to intervalley coupling and minigaps at energies above the gap due to cone anti-crossing, usually considered the only low-energy feature due to interlayer coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles.
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