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Register a new user2mu m Solid-State Laser Mode-locked By Single-Layer Graphene
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We report a 2mu m ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2mu m for various applications, such as laser surgery and material processing.
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Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its electronic and mechanical properties are also ideal for micro and nanomechanical systems, thin-film transistors and transparent and conductive composites and electrodes. Here we exploit the optoelectronic properties of graphene to realize an ultrafast laser. A graphene-polymer composite is fabricated using wet-chemistry techniques. Pauli blocking following intense illumination results in saturable absorption, independent of wavelength. This is used to passively mode-lock an Erbium-doped fibre laser working at 1559nm, with a 5.24nm spectral bandwidth and ~460fs pulse duration, paving the way to graphene-based photonics.
We demonstrate that the intrinsic properties of monolayer graphene allow it to act as a more effective saturable absorber for mode-locking fiber lasers compared to multilayer graphene. The absorption of monolayer graphene can be saturated at lower excitation intensity compared to multilayer graphene, graphene with wrinkle-like defects, and functionalized graphene. Monolayer graphene has a remarkable large modulation depth of 95.3%, whereas the modulation depth of multilayer graphene is greatly reduced due to nonsaturable absorption and scattering loss. Picoseconds ultrafast laser pulse (1.23 ps) can be generated using monolayer graphene as saturable absorber. Due to the ultrafast relaxation time, larger modulation depth and lower scattering loss of monolayer graphene, it performs better than multilayer graphene in terms of pulse shaping ability, pulse stability and output energy.
Solid state single photon sources with Fourier Transform (FT) limited lines are among the most crucial constituents of photonic quantum technologies and have been accordingly the focus of intensive research over the last several decades. However, so far, solid state systems have only exhibited FT limited lines at cryogenic temperatures due to strong interactions with the thermal bath of lattice phonons. In this work, we report a solid state source that exhibits FT limited lines measured in photo luminescence excitation (sub 100 MHz linewidths) from 3K-300K. The studied source is a color center in the two-dimensional hexagonal boron nitride and we propose that the centers decoupling from phonons is a fundamental consequence of materials low dimensionality. While the centers luminescence lines exhibit spectral diffusion, we identify the likely source of the dffusion and propose to mitigate it via dynamic spectral tuning. The discovery of FT-limited lines at room temperature, which once the spectral diffusion is controlled, will also yield FT-limited emission. Our work motivates a significant advance towards room temperature photonic quantum technologies and a new research direction in the remarkable fundamental properties of two-dimensional materials.
We demonstrate how self-assembled monolayers of aromatic molecules on copper substrates can be converted into high-quality single-layer graphene using low-energy electron irradiation and subsequent annealing. We characterize this two-dimensional solid state transformation on the atomic scale and study the physical and chemical properties of the formed graphene sheets by complementary microscopic and spectroscopic techniques and by electrical transport measurements. As substrates we successfully use Cu(111) single crystals and the technologically relevant polycrystalline copper foils.
The thermoelectric response of high mobility single layer epitaxial graphene on silicon carbide substrates as a function of temperature and magnetic field have been investigated. For the temperature dependence of the thermopower, a strong deviation from the Mott relation has been observed even when the carrier density is high, which reflects the importance of the screening effect. In the quantum Hall regime, the amplitude of the thermopower peaks is lower than a quantum value predicted by theories, despite the high mobility of the sample. A systematic reduction of the amplitude with decreasing temperature suggests that the suppression of the thermopower is intrinsic to Dirac electrons in graphene.
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