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Register a new userCarrier drift velocity and edge magnetoplasmons in graphene
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We investigate electron dynamics at the graphene edge by studying the propagation of collective edge magnetoplasmon (EMP) excitations. By timing the travel of narrow wave-packets on picosecond time scales around exfoliated samples, we find chiral propagation with low attenuation at a velocity which is quantized on Hall plateaus. We extract the carrier drift contribution from the EMP propagation and find it to be slightly less than the Fermi velocity, as expected for an abrupt edge. We also extract the characteristic length for Coulomb interaction at the edge and find it to be smaller than for soft, depletion edge systems.
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We have observed propagation of Edge Magneto-Plasmon (EMP) modes in graphene in the Quantum Hall regime by performing picosecond time of flight measurements between narrow contacts on the perimeter of micrometric exfoliated graphene. We find the propagation to be chiral with low attenuation and to have a velocity which is quantized on Hall plateaus. The velocity has two contributions, one arising from the Hall conductivity and the other from carrier drift along the edge, which we were able to separate by their different filling factor dependence. The drift component is found to be slightly less than the Fermi velocity as expected for graphene dynamics in an abrupt edge potential. The Hall conduction contribution is slower than expected and indicates a characteristic length in the Coulomb potential from the Hall charge of about 500 nm. The experiment illustrates how EMP can be coupled to the electromagnetic field, opening the perspective of GHz to THz chiral plasmonics applications to devices such as voltage controlled phase shifters, circulators, switches and compact, tunable ring resonators.
We investigate intrinsic and extrinsic decay of edge magnetoplasmons (EMPs) in graphene quantum Hall (QH) systems by high-frequency electronic measurements. From EMP resonances in disk shaped graphene, we show that the dispersion relation of EMPs is nonlinear due to interactions, giving rise to intrinsic decay of EMP wavepacket. We also identify extrinsic dissipation mechanisms due to interaction with localized states in bulk graphene from the decay time of EMP wavepackets. We indicate that, owing to the unique linear and gapless band structure, EMP dissipation in graphene can be lower than that in GaAs systems.
We study the properties of edge plasmons in two-component electron liquids in the presence of pseudomagnetic fields, which have opposite signs for the two different electronic populations and therefore preserve the time-reversal symmetry. The physical realizations of such systems are many. We discuss the cases of strained graphene and of electrons in proximity to a Skyrmion lattice, solving the problem with the Wiener-Hopf technique. We show (i) that two charged counter-propagating acoustic edge modes exist at the boundary and (ii) that, in the limit of large pseudomagnetic fields, each of them involves oscillations of only one of the two electronic components. We suggest that the edge pseudo-magnetoplasmons of graphene can be used to selectively address the electrons of one specific valley, a feature relevant for the emerging field of valleytronics. Conversely, the spin-polarized plasmons at the boundary of Skyrmion lattices can be exploited for spintronics applications. Our solution highlights new features missing in previous (similar) results obtained with uncontrolled approximations, namely a logarithmic divergence of the plasmon velocity, and the absence of gapped edge modes inside the bulk-plasmon gap.
We study magnetoplasmons or neutral collective excitations of graphene in a strong perpendicular magnetic field, which can be modelled as bound electron-hole pairs. The SU(4) symmetry of graphene arising from spin and valley pseudospin degrees of freedom is explored using Young diagrams to correctly predict the degeneracies of these excitations. The multiplet structure of the states is identical to that of mesons composed of first and second generation quarks.
Heat has always been a killing matter for traditional semiconductor machines. The underlining physical reason is that the intrinsic carrier density of a device made from a traditional semiconductor material increases very fast with a rising temperature. Once reaching a temperature, the density surpasses the chemical doping or gating effect, any p-n junction or transistor made from the semiconductor will fail to function. Here, we measure the intrinsic Fermi level (|E_F|=2.93k_B*T) or intrinsic carrier density (n_in=3.87*10^6 cm^-2 K^-2*T^2), carrier drift velocity, and G mode phonon energy of graphene devices and their temperature dependencies up to 2400 K. Our results show intrinsic carrier density of graphene is an order of magnitude less sensitive to temperature than those of Si or Ge, and reveal the great potentials of graphene as a material for high temperature devices. We also observe a linear decline of saturation drift velocity with increasing temperature, and identify the temperature coefficients of the intrinsic G mode phonon energy. Above knowledge is vital in understanding the physical phenomena of graphene under high power or high temperature.
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