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Register a new userElectric pulse induced electronic patchwork in the Mott insulator GaTa$_{4}$Se$_{8}$
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Following a recent discovery of the Insulator-to-Metal Transition induced by electric field in GaTa$_{4}$Se$_{8}$, we performed a detailed Scanning Tunneling Microscopy/Spectroscopy study of both pristine (insulating) and transited (conducting) crystals of this narrow gap Mott insulator. The spectroscopic maps show that pristine samples are spatially homogeneous insulators while the transited samples reveal at nanometer scale a complex electronic pattern that consists of metallic and super-insulating patches immersed in the pristine insulating matrix. Surprisingly, both kinds of patches are accompanied by a strong local topographic inflation, thus evidencing for a strong electron-lattice coupling involved in this metal-insulator transition. Finally, using a strong electric field generated across the STM tunneling junction, we demonstrate the possibility to trig the metal-insulator transition locally even at room temperature.
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Electronic conduction in GaM$_{4}$Se$_{8}$ (M=Nb;Ta) compounds with the fcc GaMo$_{4}$S$_{8}$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M$_{4}$ metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T$_{C}$=2.9 and 5.8K at 13 and 11.5GPa for GaNb$_{4}$Se$_{8}$ and GaTa$_{4}$Se$_{8}$, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe$_{6}$ octahedral distortion and simultaneous softening of the phonon associated with MSe-bonds.
Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material.
Our magnetic, electrical, and thermal measurements on single-crystals of the novel Mott insulator, Sr2IrO4, reveal a novel giant magneto-electric effect (GME) arising from a frustrated magnetic/ferroelectric state whose signatures are: (1) a strongly enhanced electric permittivity that peaks near a newly observed magnetic anomaly at 100 K, (2) a large (~100%) magneto-dielectric shift that occurs near a metamagnetic transition, and (3) magnetic and electric polarization hysteresis. The GME and electric polarization hinge on a spin-orbit gapping of 5d-bands, rather than the magnitude and spatial dependence of magnetization, as traditionally accepted.
Electron--electron repulsion, on the one hand, can result in bound pair, which has heavy effective mass. On the other hand, it is also the cause of Mott insulator. We study the effect of a staggered magnetic field on a Hubbard model. We find that a bound pair with large energy bandwidth can be formed under the resonant staggered field, being the half of Hubbard repulsion strength. Accordingly, the system exhibits following dynamical behaviors: (i) When an electric field is applied, fast bound pair Bloch oscillation occurs, while a single electron is frozen. (ii) When a quenching resonant field is applied to an initial antiferromagnetic Mott insulating state, the final state becomes doublon conducting state manifested by the non-zero $eta$ correlator and large charge fluctuation. Our finding indicates that the cooperation of electron-electron correlation and modulated external field can induce novel quench dynamics.
Insulator-to-metal transition in Ca$_{2}$RuO$_{4}$ has drawn keen attention because of its sensitivity to various stimulation and its potential controllability. Here, we report a direct observation of Fermi surface, which emerges upon introducing excess oxygen into an insulating Ca$_{2}$RuO$_{4}$, by using angle-resolved photoemission spectroscopy. Comparison between energy distribution curves shows that the Mott insulating gap is closed by eV-scale spectral-weight transfer with excess oxygen. Momentum-space mapping exhibits two square-shaped sheets of the Fermi surface. One is a hole-like $alpha$ sheet around the corner of a tetragonal Brillouin zone, and the other is an electron-like $beta$ sheet around the $Gamma$ point. The electron occupancies of the $alpha$ and $beta$ bands are determined to be $n_{alpha}=1.6$ and $n_{beta}=0.6$, respectively. Our result indicates that the insulator-to-metal transition occurs selectively in $d_{xz}$ and $d_{yz}$ bands and not yet in $d_{xy}$ band. This orbital selectivity is most likely explained in terms of the energy level of $d_{xy}$, which is deeper for Ca$_{2}$RuO$_{4+delta}$ than for Ca$_{1.8}$Sr$_{0.2}$RuO$_{4}$. Consequently, we found substantial differences from the Fermi surface of other ruthenates, shedding light on a unique role of excess oxygen among the metallization methods of Ca$_{2}$RuO$_{4}$.
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