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Register a new userStability analysis of a viscoelastic model for ion-irradiated silicon
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Scott A. Norris
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To study the effect of stress within the thin amorphous film generated atop Si irradiated by Ar+, we model the film as a viscoelastic medium into which the ion beam continually injects biaxial compressive stress. We find that at normal incidence, the model predicts a steady compressive stress of a magnitude comparable to experiment. However, linear stability analysis at normal incidence reveals that this mechanism of stress generation is unconditionally stabilizing due to a purely kinematic material flow, depending on none of the material parameters. Thus, despite plausible conjectures in the literature as to its potential role in pattern formation, we conclude that beam stress at normal incidence is unlikely to be a source of instability at any energy, supporting recent theories attributing hexagonal ordered dots to the effects of composition. In addition, we find that the elastic moduli appear in neither the steady film stress nor the leading order smoothening, suggesting that the primary effects of stress can be captured even if elasticity is neglected. This should greatly simplify future analytical studies of highly nonplanar surface evolution, in which the beam-injected stress is considered to be an important effect.
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We present a model for the effect of stress on thin amorphous films that develop atop ion-irradiated silicon, based on the mechanism of ion-induced anisotropic plastic flow. Using only parameters directly measured or known to high accuracy, the model exhibits remarkably good agreement with the wavelengths of experimentally-observed patterns, and agrees qualitatively with limited data on ripple propagation speed. The predictions of the model are discussed in the context of other mechanisms recently theorized to explain the wavelengths, including extensive comparison with an alternate model of stress.
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