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Register a new userStress-induced patterns in ion-irradiated Silicon: a model based on anisotropic plastic flow
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Scott A. Norris
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We present a model for the effect of stress on thin amorphous films that develop atop ion-irradiated silicon, based on the mechanism of ion-induced anisotropic plastic flow. Using only parameters directly measured or known to high accuracy, the model exhibits remarkably good agreement with the wavelengths of experimentally-observed patterns, and agrees qualitatively with limited data on ripple propagation speed. The predictions of the model are discussed in the context of other mechanisms recently theorized to explain the wavelengths, including extensive comparison with an alternate model of stress.
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To study the effect of stress within the thin amorphous film generated atop Si irradiated by Ar+, we model the film as a viscoelastic medium into which the ion beam continually injects biaxial compressive stress. We find that at normal incidence, the model predicts a steady compressive stress of a magnitude comparable to experiment. However, linear stability analysis at normal incidence reveals that this mechanism of stress generation is unconditionally stabilizing due to a purely kinematic material flow, depending on none of the material parameters. Thus, despite plausible conjectures in the literature as to its potential role in pattern formation, we conclude that beam stress at normal incidence is unlikely to be a source of instability at any energy, supporting recent theories attributing hexagonal ordered dots to the effects of composition. In addition, we find that the elastic moduli appear in neither the steady film stress nor the leading order smoothening, suggesting that the primary effects of stress can be captured even if elasticity is neglected. This should greatly simplify future analytical studies of highly nonplanar surface evolution, in which the beam-injected stress is considered to be an important effect.
During the ion bombardment of targets containing multiple component species, highly-ordered arrays of nanostructures are sometimes observed. Models incorporating coupled partial differential equations, describing both morphological and chemical evolution, seem to offer the most promise of explaining these observations. However, these models contain many unknown parameters, which must satisfy specific conditions in order to explain observed behavior. The lack of knowledge of these parameters is therefore an important barrier to the comparison of theory with experiment. Here, by adapting the recent theory of crater functions to the case of binary materials, we develop a generic framework in which many of the parameters of such models can be estimated using the results of molecular dynamics simulations. As a demonstration, we apply our framework to the recent theory of Bradley and Shipman, for the case of Ar-irradiated GaSb, in which ordered patterns were first observed. In contrast to the requirements therein that sputtered atoms form the dominant component of the collision cascade, and that preferential redistribution play an important stabilizing role, we find instead that the redistributed atoms dominate the collision cascade, and that preferential redistribution appears negligible. Hence, the actual estimated parameters for this system do not seem to satisfy the requirements imposed by current theory, motivating the consideration of other potential pattern-forming mechanisms.
Using an analogy to the classical Stefan problem, we construct evolution equations for the fluid pore pressure on both sides of a propagating stress-induced damage front. Closed form expressions are derived for the position of the damage front as a function of time for the cases of thermally-induced damage as well as damage induced by over-pressure. We derive expressions for the flow rate during constant pressure fluid injection from the surface corresponding to a spherically shaped subsurface damage front. Finally, our model results suggest an interpretation of field data obtained during constant pressure fluid injection over the course of 16 days at an injection site near Desert Peak, NV.
The speed of growth for a particular stochastic growth model introduced by Borodin and Ferrari in [Comm. Math. Phys. 325 (2014), 603-684], which belongs to the KPZ anisotropic universality class, was computed using multi-time correlations. The model was recently generalized by Toninelli in [arXiv:1503.05339] and for this generalization the stationary measure is known but the time correlations are unknown. In this note, we obtain algebraic and combinatorial proofs for the expression of the speed of growth from the prescribed dynamics.
We study transport properties of a Chalker-Coddington type model in the plane which presents asymptotically pure anti-clockwise rotation on the left and clockwise rotation on the right. We prove delocalisation in the sense that the absolutely continuous spectrum covers the whole unit circle. The result is of topological nature and independent of the details of the model.
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