No Arabic abstract
A novel nanomaterial which consists of graphene sheets decorated with silsesquioxane molecoles has been developed. Indeed, aminopropyl-silsesquioxane (POSS-NH2) has been employed to functionalize graphene oxide sheets (GOs). The surface grafting of GOs with POSS-NH2 has been established by infrared spectroscopy and X-ray photoelectron spectroscopy, while the morphology has been investigated by field emission electron microscopy as well as by atomic force microscopy. The combination of the amino functionalized POSS molecules with GO sheets produces a hybrid silicon/graphite-based nanomaterial, named GRAPOSS, for which the electrical conductivity of reduced GO was restored, thus allowing promising exploitations in several fields such as polymer nanocomposites.
We have investigated the electronic structure of graphene supported on Re(0001) before and after the intercalation of one monolayer of Ag by means of angle-resolved photoemission spectroscopy measurements and density functional theory calculations. The intercalation of Ag reduces the graphene-Re interaction and modifies the electronic band structure of graphene. Although the linear dispersion of the {pi} state of graphene in proximity of the Fermi level highlights a rather weak graphene-noble metal layer interaction, we still observe a significant hybridization between the Ag bands and the {pi} state in lower energy regions. These results demonstrate that covering a surface with a noble metal layer does decouple the electronic states, but still leads to a noticeable change in the electronic structure of graphene.
The electronic and crystallographic structure of the graphene/Rh(111) moire lattice is studied via combination of density-functional theory calculations and scanning tunneling and atomic force microscopy (STM and AFM). Whereas the principal contrast between hills and valleys observed in STM does not depend on the sign of applied bias voltage, the contrast in atomically resolved AFM images strongly depends on the frequency shift of the oscillating AFM tip. The obtained results demonstrate the perspectives of application atomic force microscopy/spectroscopy for the probing of the chemical contrast at the surface.
An in vacuo thermal desorption process has been accomplished to form epitaxial graphene (EG) on 4H- and 6H-SiC substrates using a commercial chemical vapor deposition reactor. Correlation of growth conditions and the morphology and electrical properties of EG are described. Raman spectra of EG on Si-face samples were dominated by monolayer thickness. This approach was used to grow EG on 50 mm SiC wafers that were subsequently fabricated into field effect transistors with fmax of 14 GHz.
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.
A single-crystal sheet of graphene is synthesized on the low-symmetry substrate Ir(110) by thermal decomposition of C$_2$H$_4$ at 1500 K. Using scanning tunneling microscopy, low-energy electron diffraction, angle-resolved photoemission spectroscopy, and ab initio density functional theory the structure and electronic properties of the adsorbed graphene sheet and its moire with the substrate are uncovered. The adsorbed graphene layer forms a wave pattern of nm wave length with a corresponding modulation of its electronic properties. This wave pattern is demonstrated to enable the templated adsorption of aromatic molecules and the uniaxial growth of organometallic wires. Not limited to this, graphene on Ir(110) is also a versatile substrate for 2D-layer growth and makes it possible to grow epitaxial layers on ureconstructed Ir(110).