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Register a new userThe effect of compressive strain on the Raman modes of the dry and hydrated BaCe0.8Y0.2O3 proton conductor
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The BaCe0.8Y0.2O3-{delta} proton conductor under hydration and under compressive strain has been analyzed with high pressure Raman spectroscopy and high pressure x-ray diffraction. The pressure dependent variation of the Ag and B2g bending modes from the O-Ce-O unit is suppressed when the proton conductor is hydrated, affecting directly the proton transfer by locally changing the electron density of the oxygen ions. Compressive strain causes a hardening of the Ce-O stretching bond. The activation barrier for proton conductivity is raised, in line with recent findings using high pressure and high temperature impedance spectroscopy. The increasing Raman frequency of the B1g and B3g modes thus implies that the phonons become hardened and increase the vibration energy in the a-c crystal plane upon compressive strain, whereas phonons are relaxed in the b-axis, and thus reveal softening of the Ag and B2g modes. Lattice toughening in the a-c crystal plane raises therefore a higher activation barrier for proton transfer and thus anisotropic conductivity. The experimental findings of the interaction of protons with the ceramic host lattice under external strain may provide a general guideline for yet to develop epitaxial strained proton conducting thin film systems with high proton mobility and low activation energy.
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We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an excitation wavelength close to E1 gap, all modes are clearly resolved and their evolution as a function of strain and Sn content is established. In order to decouple the individual contribution of content and strain, the analysis was conducted on series of pseudomorphic and relaxed epitaxial layers with a Sn content in the 5-17at.% range. All vibrational modes were found to display the same qualitative behavior as a function of content and strain, viz. a linear downshift as the Sn content increases or the compressive strain relaxes. Simultaneously, Ge-Sn and Ge-Ge peaks broaden, and the latter becomes increasingly asymmetric. This asymmetry, coupled with the peak position, is exploited in an empirical method to accurately quantify the Sn composition and lattice strain from Raman spectra.
Yttrium substituted BaZrO3, with nominal composition BaZr0.9Y0.1O3, a ceramic proton conductor, was subject to impedance spectroscopy for temperatures 300 K < T < 715 K at mechanical pressures 1 GPa < p < 2 GPa. The activation energies Ea of bulk and grain boundary conductivity from two perovskites synthesized by solid-state reaction and sol-gel method were determined under high pressures. At high temperature, the bulk activation energy increases with pressure by 5% for sol-gel derived sample and by 40% for solid-state derived sample. For the sample prepared by solid-state reaction, there is a large gap of 0.17 eV between the activation energy at 1.0 GPa and > 1.2 GPa. The grain boundary activation energy is around a factor two times as that of the bulk, and it reaches a maximum at 1.25 - 1.5 GPa, and then decrease as the pressure increases, indicating higher proton mobility in the grain boundaries at higher pressure. Since this effect is not reversible, it is suggested that the grain boundary resistance decreases as a result of pressure induced sintering. The steady increase of the bulk resistivity upon pressurizing suggests that the proton mobility depends on the space available in the lattice. In return, an expanded lattice with a/a0 > 1 should thus have a lower activation energy, suggesting that thin films expansive tensile strain could have a larger proton conductivity with desirable properties for applications.
The influence of lattice strain and Mg vacancies on the superconducting properties of MgB2 samples has been investigated. High quality samples with sharp superconducting transitions were synthesized. The variation in lattice strain and Mg vacancy concentrations were obtained by varying the synthesis conditions. It was found that high strain (~1%) and the presence of Mg vacancies (~ 5 %) resulted in lowering the Tc by only 2 K.
We report on preparation dependent properties observed in monolayer WS2 samples synthesized via chemical vapor deposition (CVD) on a variety of common substrates (Si/SiO2, sapphire, fused silica) as well as samples that were transferred from the growth substrate onto a new substrate. The as-grown CVD materials (as-WS2) exhibit distinctly different optical properties than transferred WS2 (x-WS2). In the case of CVD growth on Si/SiO2, following transfer to fresh Si/SiO2 there is a ~50 meV shift of the ground state exciton to higher emission energy in both photoluminescence emission and optical reflection. This shift is indicative of a reduction in tensile strain by ~0.25%. Additionally, the excitonic state in x-WS2 is easily modulated between neutral and charged exciton by exposure to moderate laser power, while such optical control is absent in as-WS2 for all growth substrates investigated. Finally, we observe dramatically different laser power-dependent behavior for as-grown and transferred WS2. These results demonstrate a strong sensitivity to sample preparation that is important for both a fundamental understanding of these novel materials as well as reliable reproduction of device properties.
The mean-field Landau-type theory is used to analyze the polarization properties of epitaxial ferroelectric thin films grown on dissimilar cubic substrates, which induce biaxial compressive stress in the film plane. The intrinsic effect of the film surfaces on the spontaneous polarization is taken into account via the concept of the extrapolation length. The theory simultaneously allows for the influence of the misfit strain imposed on the film lattice by a thick substrate. Numerical calculations are performed for PbTiO3 and BaTiO3 films under an assumption of the polarization reduction in surface layers. The film mean polarization is calculated as a function of film thickness, temperature, and misfit strain. It is shown that the negative intrinsic size effect is reduced in epitaxial films due to the in-plane compression of the film lattice. At room temperature, strong reduction of the mean polarization may take place only in ultrathin films (thickness ~ 1 nm). Theoretical predictions are compared with the available experimental data on polarization properties of BaTiO3 films grown on SrRuO3 coated SrTiO3.
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