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Register a new userMeasurement of spin diffusion in semi-insulating GaAs
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We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion coefficient of 88 +/- 12 cm2/s is roughly constant at temperatures from 15 K to 150 K, and the spin diffusion length is at least 450 nm. We show that it is possible to use spin diffusion to estimate the electron diffusion coefficient. Due to electron-electron interactions, the electron diffusion is 1.4 times larger than the spin diffusion.
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The charge dynamics of hydrogen-like centers formed by the implantation of energetic (4 MeV) muons in semi-insulating GaAs have been studied by muon spin resonance in electric fields. The results point to the significant role of deep hole traps in the compensation mechanism of GaAs. Electric-field-enhanced neutralization of deep electron and hole traps by muon-track-induced hot carriers results to an increase of the non-equilibrium carrier life-times. As a consequence, the muonium ($mu^+ + e^-$) center at the tetrahedral As site can capture the tracks holes and therefore behaves like a donor.
The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wavevector $bf k$. Whereas for {it 3D bulk zincblende} solids the electron (heavy hole) SS exhibits a cubic (linear) scaling with $k$, in {it 2D quantum-wells} the electron (heavy hole) SS is currently believed to have a mostly linear (cubic) scaling. Such expectations are based on using a small 3D envelope function basis set to describe 2D physics. By treating instead the 2D system explicitly in a multi-band many-body approach we discover a large linear scaling of hole states in 2D. This scaling emerges from hole bands coupling that would be unsuspected by the standard model that judges coupling by energy proximity. This discovery of a linear Dresselhaus k-scaling for holes in 2D implies a different understanding of hole-physics in low-dimensions.
We report the synthesis and properties of two new insulating phases of SrFeO3-d with introduction of oxygen deficiencies in metallic SrFeO3 ; one with 0.15 < d < 0.19 (sample A)and the other above d = 0.19 (sample B). Sample A shows large negative magnetoresistance around the charged ordering (CO) temperature with magnetic anomalies seen in the temperature dependent resistivity,magnetization and M-H hysteresis loops. Sample B shows a smooth insulating behavior with no thermal hysteresis in the resistivity and with a small positive magnetoresistance. cac and cdc show multiple features associated with a frustrated magnetic order (helical) due to competing ferro- and antiferromagnetic interactions. The competing effects of ferro- and antiferromagnetic phases extend up to T ~ 230 K revealing a new high temperature scale in this system. These observations are discussed in the context of magnetic interactions associated with the varying Fe4+/Fe3+ ratio.
To investigate the trapping and detrapping in SI-GaAs particle detectors we analyzed the signals caused by 5.48 MeV alpha particles with a charge sensitive preamplifier. From the bias and temperature dependence of these signals we determine the activation energies of two electron traps. Additional simulation and measurements of the lifetime as a function of resistivity have shown that the EL2+ is the dominant electron trap in semi-insulating GaAs.
Spin wave frequencies are observed in ultra-thin Fe/GaAs(100) films at temperatures where the spontaneous zero field magnetization is zero. The films exhibit good cyrstalline structure, and the effect of magnetic anisotropies is apparent even though no zero field spin wave energy gap exists. An analysis is given in terms of a superparamagnetic model in which the film is treated as a network of non-interacting single domain magnetic islands. A spin wave analysis provides a means to separate measured values of anisotropy parameters from products involving anisotropy and island volume. In this way, a measure of the activation volume associated with superparamagnetic islands is obtained for different Fe film thicknesses. Results suggest that the island lateral area increases with increasing film thickness.
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