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Register a new userMomentum relaxation in a semiconductor proximity-coupled to a disordered s-wave superconductor: effect of scattering on topological superconductivity
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We study the superconducting proximity effect between a conventional semiconductor and a disordered s-wave superconductor. We calculate the effective momentum relaxation rate in the semiconductor due to processes involving electron tunneling into a disordered superconductor and scattering off impurities. The magnitude of the effective disorder scattering rate is important for understanding the stability of the topological (chiral p-wave) superconducting state that emerges in the semiconductor, since disorder scattering has a detrimental effect and can drive the system into a non-topological state. We find that the effective impurity scattering rate involves higher-order tunneling processes and is suppressed due to the destructive quantum interference of quasi-particle and quasi-hole trajectories. We show that, despite the fact that both the proximity-induced gap and the effective impurity scattering rate depend on interface transparency, there is a large parameter regime where the topological superconducting phase is robust against disorder in the superconductor. Thus, we establish that the static disorder in the superconductor does not suppress the proximity induced topological superconductivity in the semiconductor.
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We show that the {it gapped} triplet superconductivity, i.e., a triplet superconductor with triplet order parameter, can be realized in strong spin-orbit-coupled quantum wells in proximity to $s$-wave superconductor. It is revealed that with the singlet order parameter induced from the superconducting proximity effect, in quantum wells, not only can the triplet pairings arise due to the spin-orbit coupling, but also the triplet order parameter can be induced due to the repulsive effective electron-electron interaction, including the electron-electron Coulomb and electron-phonon interactions. This is a natural extension of the work of de Gennes, in which the repulsive-interaction-induced singlet order parameter arises in the normal metal in proximity to $s$-wave superconductor [Rev. Mod. Phys. {bf 36}, 225 (1964)]. Specifically, we derive the effective Bogoliubov-de Gennes equation, in which the self-energies due to the effective electron-electron interactions contribute to the singlet and triplet order parameters. It is further shown that for the singlet order parameter, it is efficiently suppressed due to this self-energy renormalization; whereas for the triplet order parameter, it is the $p$-wave ($p_xpm ip_y$) one with the ${bf d}$-vector parallel to the effective magnetic field due to the spin-orbit coupling. Finally, we perform the numerical calculation in InSb (100) quantum wells. Specifically, we reveal that the Coulomb interaction is much more important than the electron-phonon interaction at low temperature. Moreover, it shows that with proper electron density, the minimum of the renormalized singlet and the maximum of the induced triplet order parameters are comparable, and hence can be experimentally distinguished.
Realization of topological superconductors (TSCs) hosting Majorana fermions is a central challenge in condensed-matter physics. One approach is to use the superconducting proximity effect (SPE) in heterostructures, where a topological insulator contacted with a superconductor hosts an effective p-wave pairing by the penetration of Cooper pairs across the interface. However, this approach suffers a difficulty in accessing the topological interface buried deep beneath the surface. Here, we propose an alternative approach to realize topological superconductivity without SPE. In a Pb(111) thin film grown on TlBiSe2, we discover that the Dirac-cone state of substrate TlBiSe2 migrates to the top surface of Pb film and obtains an energy gap below the superconducting transition temperature of Pb. This suggests that a BCS superconductor is converted into a TSC by the topological proximity effect. Our discovery opens a route to manipulate topological superconducting properties of materials.
Proximity-induced superconductivity in a 3D topological insulator represents a new avenue for observing zero-energy Majorana fermions inside vortex cores. Relatively small gaps and low transition temperatures of conventional s-wave superconductors put the hard constraints on these experiments. Significantly larger gaps and higher transition temperatures in cuprate superconductors might be an attractive alternative to considerably relax these constraints, but it is not clear whether the proximity effect would be effective in heterostructures involving cuprates and topological insulators. Here, we present angle-resolved photoemission studies of thin Bi2Se3 films grown in-situ on optimally doped Bi2Sr2CaCu2O8 substrates that show the absence of proximity-induced gaps on the surfaces of Bi2Se3 films as thin as a 1.5 quintuple layer. These results suggest that the superconducting proximity effect between a cuprate superconductor and a topological insulator is strongly suppressed, likely due to a very short coherence length along the c-axis, incompatible crystal and pairing symmetries at the interface, small size of the topological surface state Fermi surface and adverse effects of a strong spin-orbit coupling in the topological material.
Superconductor-topological insulator (SC-TI) heterostructures were proposed to be a possible platform to realize and control Majorana zero-modes. Despite experimental signatures indicating their existence, univocal interpretation of the observed features demands theories including realistic electronic structures. To achieve this, we solve the Kohn-Sham-Dirac-Bogoliubov-de Gennes equations for ultrathin Bi$_2$Se$_3$ films on superconductor PdTe, within the fully relativistic Korringa-Kohn-Rostoker method, and investigate quasiparticle spectra as a function of chemical potential and film thickness. We find a strongly momentum-dependent proximity-induced gap feature where the gap sizes highly depend on characteristics of the TI states. The interface TI Dirac state is relevant to the induced gap only when the chemical potential is close to the Dirac-point energy. Otherwise, at a given chemical potential, the largest induced gap arises from the highest-energy quantum-well states, whereas the smallest gap arises from the TI topological surface state with its gap size depending on the TI pairing potential.
In the following paper we investigate the critical temperature $T_c$ behavior in the two-dimensional S/TI (S denotes superconductor and TI - topological insulator) junction with a proximity induced in-plane helical magnetization in the TI surface. The calculations of $T_c$ are performed using the general self-consistent approach based on the Usadel equations in Matsubara Greens functions technique. We show that the presence of the helical magnetization leads to the nonmonotonic behavior of the critical temperature as a function of the topological insulator layer thickness.
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