Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userThe Difficulty of Gate Control in Molecular Transistors
125
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Greens function (NEGF) method. When molecular energy levels are away from the Fermi energy they can be linearly shifted by the gate voltage, which is consistent with recent experimental observations [Nature 462, 1039 (2009)]. However, when they move near to the Fermi energy (turn-on process), the shifts become extremely small and almost independent of the gate voltage. The fact that the conductance may be beyond the gate control in the ON state will challenge the implementation of molecular transistors.
rate research
Read More
A rate equation formalism is used to determine the effect of electron-phonon coupling on the conductance of a molecule. Interplay between the phonon-induced renormalization of the density of states on the quantum dot and the phonon-induced renormalization of the dot-lead coupling is found to be important. Whether or not the phonons are able to equilibrate in a time rapid compared to the transit time of an electron through the dot is found to affect the conductance. Observable signatures of phonon equilibration are presented.
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to charged impurities near the diamond surface. Here, we fabricate diamond field effect transistors by using a monocrystalline hexagonal boron nitride as a gate dielectric. The resulting high mobility of charge carriers allows us to observe quantum oscillations in both the longitudinal and Hall resistivities. The oscillations provide important information on the fundamental properties of the charge carriers, such as effective mass, lifetime, and dimensionality. Our results indicate the presence of a high-quality two-dimensional hole gas at the diamond surface and thus pave the way for studies of quantum transport in diamond and the development of low-loss and high-speed devices.
We investigate by low-temperature transport experiments the sub-threshold behavior of triple-gate silicon field-effect transistors. These three-dimensional nano-scale devices consist of a lithographically defined silicon nanowire surrounded by a gate with an active region as small as a few tens of nanometers, down to 50x60x35 nm^3. Conductance versus gate voltage show Coulomb-blockade oscillations with a large charging energy due to the formation of a small potential well below the gate. According to dependencies on device geometry and thermionic current analysis, we conclude that sub-threshold channels, a few nanometers wide, appear at the nanowire edges, hence providing an experimental evidence for the corner-effect.
We report a method for making horizontal wrap-gate nanowire transistors with up to four independently controllable wrap-gated segments. While the step up to two independent wrap-gates requires a major change in fabrication methodology, a key advantage to this new approach, and the horizontal orientation more generally, is that achieving more than two wrap-gate segments then requires no extra fabrication steps. This is in contrast to the vertical orientation, where a significant subset of the fabrication steps needs to be repeated for each additional gate. We show that cross-talk between adjacent wrap-gate segments is negligible despite separations less than 200 nm. We also demonstrate the ability to make multiple wrap-gate transistors on a single nanowire using the exact same process. The excellent scalability potential of horizontal wrap-gate nanowire transistors makes them highly favourable for the development of advanced nanowire devices and possible integration with vertical wrap-gate nanowire transistors in 3D nanowire network architectures.
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate voltage applied to the in-between Fe layer slab. We find that the application of a gate voltage to the in-between Fe slab strongly affects the junctions TMR due to the tuning or untuning of conductance resonances mediated by quantum well states. The gate voltage allows a significant enhancement of the TMR, in a more controllable way than by changing the thickness of the in-between Fe slab. This effect may be useful in the design of future spintronic devices based on the TMR effect, requiring large and controllable TMR values.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
