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Register a new userSmNiO3/NdNiO3 thin film multilayers
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Rare earth nickelates RENiO3 which attract interest due to their sharp metal-insulator phase transition, are instable in bulk form due to the necessity of an important oxygen pressure to stabilize Ni in its 3+ state of oxidation. Here, we report the stabilization of rare earth nickelates in [(SmNiO3)t/(NdNiO3)t]n thin film multilayers, t being the thickness of layers alternated n times. Both bilayers and multilayers have been deposited by Metal-Organic Chemical Vapour Deposition. The multilayer structure and the presence of the metastable phases SmNiO3 and NdNiO3 are evidenced from by X-ray and Raman scattering. Electric measurements of a bilayer structure further support the structural quality of the embedded rare earth nickelate layers.
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Ferroelectric films usually have phase states and physical properties very different from those of bulk ferroelectrics. Here we propose free-standing ferroelectric-elastic multilayers as a bridge between these two material systems. Using a nonlinear thermodynamic theory, we determine phase states of such multilayers as a function of temperature, misfit strain, and volume fraction fi of ferroelectric material. The numerical calculations performed for two classical ferroelectrics - PbTiO3 and BaTiO3 - demonstrate that polarization states of multilayers in the limiting cases fi -> 0 and fi -> 1 coincide with those of thin films and bulk crystals. At intermediate volume fractions, however, the misfit strain-temperature phase diagrams of multilayers differ greatly from those of epitaxial films. Remarkably, a ferroelectric phase not existing in thin films and bulk crystals can be stabilized in BaTiO3 multilayers. Owing to additional tunable parameter and reduced clamping, ferroelectric multilayers may be superior for a wide range of device applications.
The current driven motion of skyrmions in MnSi and FeGe thinned single crystals could be initiated at current densities of the order of $10^6$ A/m, five orders of magnitude smaller than for magnetic domain walls. The technologically crucial step of replicating these results in thin films has not been successful to date, but the reasons are not clear. Elucidating them requires analyzing system characteristics at scales of few nm where the key Dzyaloshinskii Moriya (DM) interactions vary, and doing so in near application conditions, i.e. oxidation protected systems at room temperature. In this works magnetic force microscopy (MFM) studies of magnetron sputtered Ir/Co/Pt multilayers we show skyrmions that are smaller than previously observed, are not circularly symmetric, and are pinned to 50 nm wide areas of 75 percent higher than average DM interaction. This finding matches our measurement of Co layer thickness inhomogeneity of the order of $pm$1.2 atomic monolayers per 0.6 nm layer, and indicates that layer flatness must be controlled with greater precision to preclude skyrmion pinning.
We experimentally demonstrate the formation of room-temperature skyrmions with radii of about 25,nm in easy-plane anisotropy multilayers with interfacial Dzyaloshinskii-Moriya interaction (DMI). We detect the formation of individual magnetic skyrmions by magnetic force microscopy and find that the skyrmions are stable in out-of-plane fields up to about 200 mT. We determine the interlayer exchange coupling as well as the strength of the interfacial DMI. Additionally, we investigate the dynamic microwave spin excitations by broadband magnetic resonance spectroscopy. From the uniform Kittel mode we determine the magnetic anisotropy and low damping $alpha_{mathrm{G}} < 0.04$. We also find clear magnetic resonance signatures in the non-uniform (skyrmion) state. Our findings demonstrate that skyrmions in easy-plane multilayers are promising for spin-dynamical applications.
We describe epitaxial Ge/Si multilayers with cross-plane thermal conductivities which can be systematically reduced to exceptionally low values, as compared both with bulk and thin-film SiGe alloys of the same average concentration, by simply changing the thicknesses of the constituent layers. Ab initio calculations reveal that partial interdiffusion of Ge into the Si spacers, which naturally results from Ge segregation during growth, plays a determinant role, lowering the thermal conductivity below what could be achieved without interdiffusion (perfect superlattice), or with total interdiffusion (alloy limit). This phenomenon is similar to the one previously observed in alloys with embedded nanoparticles, and it stresses the importance of combining alloy and nanosized scatterers simultaneously to minimize thermal conductivity. Our calculations thus suggest that superlattices with sharp interfaces, which are commonly sought but difficult to realize, are worse than compositionally-modulated Si1-xGex multilayers in the search for materials with ultralow thermal conductivities.
Non-collinear magnets exhibit a rich array of dynamic properties at microwave frequencies. They can host nanometre-scale topological textures known as skyrmions, whose spin resonances are expected to be highly sensitive to their local magnetic environment. Here, we report a magnetic resonance study of an [Ir/Fe/Co/Pt] multilayer hosting Neel skyrmions at room temperature. Experiments reveal two distinct resonances of the skyrmion phase during in-plane ac excitation, with frequencies between 6-12 GHz. Complementary micromagnetic simulations indicate that the net magnetic dipole moment rotates counterclockwise (CCW) during both resonances. The magnon probability distribution for the lower-frequency resonance is localised within isolated skyrmions, unlike the higher-frequency mode which principally originates from areas between skyrmions. However, the properties of both modes depend sensitively on the out-of-plane dipolar coupling, which is controlled via the ferromagnetic layer spacing in our heterostructures. The gyrations of stable isolated skyrmions reported in this room temperature study encourage the development of new material platforms and applications based on skyrmion resonances. Moreover, our material architecture enables the resonance spectra to be tuned, thus extending the functionality of such applications over a broadband frequency range.
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