No Arabic abstract
The current driven motion of skyrmions in MnSi and FeGe thinned single crystals could be initiated at current densities of the order of $10^6$ A/m, five orders of magnitude smaller than for magnetic domain walls. The technologically crucial step of replicating these results in thin films has not been successful to date, but the reasons are not clear. Elucidating them requires analyzing system characteristics at scales of few nm where the key Dzyaloshinskii Moriya (DM) interactions vary, and doing so in near application conditions, i.e. oxidation protected systems at room temperature. In this works magnetic force microscopy (MFM) studies of magnetron sputtered Ir/Co/Pt multilayers we show skyrmions that are smaller than previously observed, are not circularly symmetric, and are pinned to 50 nm wide areas of 75 percent higher than average DM interaction. This finding matches our measurement of Co layer thickness inhomogeneity of the order of $pm$1.2 atomic monolayers per 0.6 nm layer, and indicates that layer flatness must be controlled with greater precision to preclude skyrmion pinning.
Chiral magnetic Mn$_x$Fe$_{1-x}$Ge compounds have an antisymmetric exchange interaction that is tunable with the manganese stoichiometric fraction, $x$. Although millimeter-scale, polycrystalline bulk samples of this family of compounds have been produced, thin-fi
We present results of the analysis of Brillouin Light Scattering (BLS) measurements of spin waves performed on ultrathin single and multirepeat CoFeB layers with adjacent heavy metal layers. From a detailed study of the spin-wave dispersion relation, we independently extract the Heisenberg exchange interaction (also referred to as symmetric exchange interaction), the Dzyaloshinskii-Moriya interaction (DMI, also referred to as antisymmetric exchange interaction), and the anisotropy field. We find a large DMI in CoFeB thin films adjacent to a Pt layer and nearly vanishing DMI for CoFeB films adjacent to a W layer. Furthermore, the residual influence of the dipolar interaction on the dispersion relation and on the evaluation of the Heisenberg exchange parameter is demonstrated. In addition, an experimental analysis of the DMI on the spin-wave lifetime is presented. All these parameters play a crucial role in designing skyrmionic or spin-orbitronic devices.
We carry out density functional theory calculations which demonstrate that the electron dynamics in the skyrmion phase of Fe-rich Mn$_{1-x}$Fe$_x$Ge alloys is governed by Berry phase physics. We observe that the magnitude of the Dzyaloshinskii-Moriya interaction, directly related to the mixed space-momentum Berry phases, changes sign and magnitude with concentration $x$ in direct correlation with the data of Shibata {it et al.}, Nature Nanotech. {bf 8}, 723 (2013). The computed anomalous and topological Hall effects in FeGe are also in good agreement with available experiments. We further develop a simple tight-binding model able to explain these findings. Finally, we show that the adiabatic Berry phase picture is violated in the Mn-rich limit of the alloys.
We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He$^{+}$) ion irradiation. We compare results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the multilayers. Our results show clear evidence of the He$^{+}$ irradiation effects on the magnetic properties which is consistent with interface modification due to the effects of the He$^{+}$ irradiation. This external degree of freedom offers promising perspectives to further improve the control of magnetic skyrmions in multilayers, that could push them towards integration in future technologies, such as in low-power neuromorphic computing.
Despite a decade of research, the precise mechanisms occurring at interfaces underlying the Dzyaloshinskii-Moriya interaction (DMI), and thus the possibility of fine-tuning it, are not yet fully identified. In this study, we investigate the origin of the interfacial DMI, aiming at disentangling how independent are the interfaces around the ferromagnetic layer, and what are their relative contributions to the effective DMI amplitude. For this purpose, we have grown and investigated a large variety of systems with a common structure Pt$|$Co$|M$ with $M =$ Ni, Pd, Ru, Al, Al$|$Ta and MoSi. We explore the correlation between the effective interfacial DMI, and different intrinsic properties of metals, namely atomic number, electronegativity and work function difference at the Co$|M$ interfaces. We find a linear relationship between interfacial DMI and the work function difference between the two elements, hence relating the nature of this behavior to the interfacial potential gradient at the metallic interfaces. The understanding of the DMI mechanism is of utmost importance since it opens up the possibility of precisely engineering the magnetic and hence the spintronic properties for future devices.