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Register a new userSpin caloritronics in magnetic tunnel junctions: Ab initio studies
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This Letter presents ab initio calculations of the magneto-thermoelectric power (MTEP) and of the spin-Seebeck coefficient in MgO based tunnel junctions with Fe and Co leads. In addition, the normal thermopower is calculated and gives for pure Fe and Co an quantitative agreement with experiments. Consequently, the calculated values in tunnel junctions are a good estimation of upper limits. In particular, spin-Seebeck coefficients of more than 100 mu V/K are possible. The MTEP ratio exceed several 1000% and depends strongly on temperature. In the case of Fe leads the MTEP ratio diverges even to infinity at certain temperatures. The spin-Seebeck coefficient as a function of temperature shows a non-trivial dependence. For Fe/MgO/Fe even the sign of the coefficient changes with temperature.
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We calculate the spin-transfer torque in Fe/MgO/Fe tunnel junctions and compare the results to those for all-metallic junctions. We show that the spin-transfer torque is interfacial in the ferromagnetic layer to a greater degree than in all-metallic junctions. This result originates in the half metallic behavior of Fe for the $Delta_1$ states at the Brillouin zone center; in contrast to all-metallic structures, dephasing does not play an important role. We further show that it is possible to get a component of the torque that is out of the plane of the magnetizations and that is linear in the bias. However, observation of such a torque requires highly ideal samples. In samples with typical interfacial roughness, the torque is similar to that in all-metallic multilayers, although for different reasons.
The dependence of tunneling magnetoresistance and spin-transfer torque in FeCo/MgO/FeCo tunnel junctions on the Co concentration and the bias voltage are investigated ab initio. We find that the tunneling magnetoresistance decreases with the Co concentration in contradiction with previous calculations but in agreement with recent experiments. This dependence is explained from bulk properties of the alloys. By using a realistic description of the disorder in the alloys we can show that even small amounts of disorder lead to a drastic drop in the tunneling magnetoresistance. This provides a quantitative explanation of the difference between calculated and measured values. The spin-transfer torque shows a linear voltage dependence for the in-plane component and a quadratic for the out-of-plane component for all concentrations at small bias voltages. In particular, the linear slope of the in-plane torque is independent of the concentration. For high bias voltages the in-plane torque shows a strong nonlinear deviation from the linear slope for high Co concentrations. This is explained from the same effects which govern the tunneling magnetoresistance.
The thermal spin-transfer torque (TSTT) is an effect to switch the magnetic free layer in a magnetic tunnel junction by a temperature gradient only. We present ab initio calculations of the TSTT. In particular, we discuss the influence of magnetic layer composition by considering $text{Fe}_text{x}text{Co}_{text{1-x}}$ alloys. Further, we compare the TSTT to the bias voltage driven STT and discuss the requirements for a possible thermal switching. For example, only for very thin barriers of 3 monolayers MgO a thermal switching is imaginable. However, even for such a thin barrier the TSTT is still too small for switching at the moment and further optimization is needed. In particular, the TSTT strongly depends on the composition of the ferromagentic layer. In our current study it turns out that at the chosen thickness of the ferromagnetic layer pure Fe gives the highest thermal spin-transfer torque.
Spin filter tunnel junctions are based on selective tunneling of up and down spin electrons controlled through exchange splitting of the band structure of a ferromagnetic insulator. Therefore, spin filter efficiency can be tuned by adjusting exchange strength of the tunnel barrier. We have observed that magnetic field and bias voltage (current) can be used to regulate exchange strength and consequently spin-filter efficiency in tunnel junctions with ferromagnetic DyN and GdN tunnel barrier. In tunnel junctions with DyN barrier we obtained $sim$37$%$ spin polarization of tunneling electrons at 11 K due to a small exchange splitting ($ E_{ex}$) $approx$5.6 meV of the barrier height ($Phi _0$) $approx$60 meV. Huge spin-filter efficiency $sim$97$%$ was found for tunnel junctions with GdN barrier due to larger $E_{ex}$ $approx$47 meV. In the presence of an applied magnetic field, barrier height can further split due to magnetic field dependent exchange splitting $ E_{ex}(H)$. The spin filter efficiency in DyN tunnel junctions can be increased up to $sim$87$%$ with magnetic field. Electric and magnetic field tuned spin-filter efficiency of these tunnel junctions gives opportunity for practical application of these devices with additional functionality.
We simulate the spin torque-induced reversal of the magnetization in thin disks with perpendicular anisotropy at zero temperature. Disks typically smaller than 20 nm in diameter exhibit coherent reversal. A domain wall is involved in larger disks. We derive the critical diameter of this transition. Using a proper definition of the critical voltage, a macrospin model can account perfectly for the reversal dynamics when the reversal is coherent. The same critical voltage appears to match with the micromagnetics switching voltage regardless of the switching path.
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