Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userUltrafast mapping of optical polarization states onto spin coherence of localized electrons in a semiconductor
162
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We experimentally demonstrate an ultrafast method for preparing spin states of donor-bound electrons in GaAs with single laser pulses. Each polarization state of a preparation pulse has a direct mapping onto a spin state, with bijective correspondence between the Poincar{e}-sphere (for photon polarization) and Bloch-sphere (for spin) state representations. The preparation is governed by a stimulated Raman process and occurs orders of magnitude faster than the spontaneous emission and spin dephasing. Similar dynamics governs our ultrafast optical Kerr detection of the spin coherence, thus getting access to spin state tomography. Experiments with double preparation pulses show an additive character for the preparation method. Utilization of these phenomena is of value for quantum information schemes.
rate research
Read More
We study the coherence times and perform manipulations on the lowest-energy states of trivalent cerium ion in calcium tungstate crystal. We find the phase memory time reaching 14.2 ${mu}$s and the time of coherent manipulations reaching 0.3 ${mu}$s in the low-temperature limit, the latter can potentially be elongated by using the rotation angle and off-resonance error correction schemes.
The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary quantum dots. Future research directions and prospects are discussed.
Optically addressable spins are actively investigated in quantum communication, processing and sensing. Optical and spin coherence lifetimes, which determine quantum operation fidelity and storage time, are often limited by spin-spin interactions, which can be decreased by polarizing spins in their lower energy state using large magnetic fields and/or mK range temperatures. Here, we show that optical pumping of a small fraction of ions with a fixed frequency laser, coupled with spin-spin interactions and spin diffusion, leads to substantial spin polarization in a paramagnetic rare earth doped crystal, $^{171}$Yb$^{3+}$:YSO. Indeed, up to more than 90 % spin polarizations have been achieved at 2 K and zero magnetic field. Using this spin polarization mechanism, we furthermore demonstrate an increase in optical coherence lifetime from 0.3 ms to 0.8 ms, due to a strong decrease in spin-spin interactions. This effect opens the way to new schemes for obtaining long optical and spin coherence lifetimes in various solid-state systems such as ensembles of rare earth ions or color centers in diamond, which is of interest for a broad range of quantum technologies.
For applications exploiting the valley pseudospin degree of freedom in transition metal dichalcogenide monolayers, efficient preparation of electrons or holes in a single valley is essential. Here, we show that a magnetic field of 7 Tesla leads to a near-complete valley polarization of electrons in MoSe2 monolayer with a density 1.6x10^{12} cm^{-2}; in the absence of exchange interactions favoring single-valley occupancy, a similar degree of valley polarization would have required a pseudospin g-factor exceeding 40. To investigate the magnetic response, we use polarization resolved photoluminescence as well as resonant reflection measurements. In the latter, we observe gate voltage dependent transfer of oscillator strength from the exciton to the attractive-Fermi-polaron: stark differences in the spectrum of the two light helicities provide a confirmation of valley polarization. Our findings suggest an interaction induced giant paramagnetic response of MoSe2, which paves the way for valleytronics applications.
Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($sim1~mu$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled generalised spin with total angular momentum $J=tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~mathrm{ms}$ Hahn-echo and $9~mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
