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Register a new userPotential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
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Added by
Hartmut Sadrozinski
Publication date
2020
fields
Physics
and research's language is
English
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Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.
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The development of Low-Gain Avalanche Detectors has opened up the possibility of manufacturing silicon detectors with signal larger than that of traditional sensors. In this paper we explore the timing performance of Low-Gain Avalanche Detectors, and in particular we demonstrate the possibility of obtaining ultra-fast silicon detector with time resolution of less than 20 picosecond.
In this paper we report on the timing resolution of the first production of 50 micro-meter thick Ultra-Fast Silicon Detectors (UFSD) as obtained in a beam test with pions of 180 GeV/c momentum. UFSD are based on the Low-Gain Avalanche Detectors (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test belongs to the first production of thin (50 {mu}m) sensors, with an pad area of 1.4 mm2. The gain was measured to vary between 5 and 70 depending on the bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution, determined comparing the time of arrival of the particle in one or more UFSD and the trigger counter, for single UFSD was measured to be 35 ps for a bias voltage of 200 V, and 26 ps for a bias voltage of 240 V, and for the combination of 3 UFSD to be 20 ps for a bias voltage of 200 V, and 15 ps for a bias voltage of 240 V.
Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered its first 50 $mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), based on the Low-Gain Avalanche Diode design. These sensors use high resistivity Si-on-Si substrates, and have a variety of gain layer doping profiles and designs based on Boron, Gallium, Carbonated Boron and Carbonated Gallium to obtain a controlled multiplication mechanism. Such variety of gain layers will allow identifying the most radiation hard technology to be employed in the production of UFSD, to extend their radiation resistance beyond the current limit of $phi sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present the characterisation, the timing performances, and the results on radiation damage tolerance of this new FBK production.
We present results for time resolution studies performed on three different scintillating plastics and two silicon photo-multipliers. These studies are intended to determine whether scintillating plastic/silicon photo-multiplier systems can be employed to provide a fast trigger signal for NICAs Multi Purpose Detector (MPD). Our results show that such a system made of cells with transverse dimensions of order of a few cm, coupled to silicon photo-multipliers, provides a time resolution of about 50 ps, which can be even further improved to attain the MPD trigger requirements of 20 ps.
Pressurized drift-tube chambers are efficient detectors for high-precision tracking over large areas. The Monitored Drift-Tube (MDT) chambers of the muon spectrometer of the ATLAS detector at the Large Hadron Collider (LHC) reach a spatial resolution of 35 micons and almost 100% tracking efficiency with 6 layers of 30 mm diameter drift tubes operated with Ar:CO2 (93:7) gas mixture at 3 bar and a gas gain of 20000. The ATLAS MDT chambers are designed to cope with background counting rates due to neutrons and gamma-rays of up to about 300 kHz per tube which will be exceeded for LHC luminosities larger than the design value of 10-34 per square cm and second. Decreasing the drift-tube diameter to 15 mm while keeping the other parameters, including the gas gain, unchanged reduces the maximum drift time from about 700 ns to 200 ns and the drift-tube occupancy by a factor of 7. New drift-tube chambers for the endcap regions of the ATLAS muon spectrometer have been designed. A prototype chamber consisting of 12 times 8 layers of 15 mm diameter drift tubes of 1 m length has been constructed with a sense wire positioning accuracy of 20 microns. The 15 mm diameter drift-tubes have been tested with cosmic rays in the Gamma Irradiation Facility at CERN at counting rates of up to 1.85 MHz.
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