Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userMicroscopic simulation of superconductor-topological insulator proximity structures
187
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
We present microscopic, self-consistent calculations of the superconducting order parameter and pairing correlations near the interface of an $s$-wave superconductor and a three-dimensional topological insulator with spin-orbit coupling. We discuss the suppression of the order parameter by the topological insulator and show that the equal-time pair correlation functions in the triplet channel, induced by spin-flip scattering at the interface, are of $p_xpm i p_y$ symmetry. We verify that the spectrum at sub-gap energies is well described by the Fu-Kane model. The sub-gap modes are viewed as interface states with spectral weight penetrating well into the superconductor. We extract the phenomenological parameters of the Fu-Kane model from microscopic calculations, and find they are strongly renormalized from the bulk material parameters. This is consistent with previous results of Stanescu et al for a lattice model using perturbation theory in the tunneling limit.
rate research
Read More
Realization of topological superconductors (TSCs) hosting Majorana fermions is a central challenge in condensed-matter physics. One approach is to use the superconducting proximity effect (SPE) in heterostructures, where a topological insulator contacted with a superconductor hosts an effective p-wave pairing by the penetration of Cooper pairs across the interface. However, this approach suffers a difficulty in accessing the topological interface buried deep beneath the surface. Here, we propose an alternative approach to realize topological superconductivity without SPE. In a Pb(111) thin film grown on TlBiSe2, we discover that the Dirac-cone state of substrate TlBiSe2 migrates to the top surface of Pb film and obtains an energy gap below the superconducting transition temperature of Pb. This suggests that a BCS superconductor is converted into a TSC by the topological proximity effect. Our discovery opens a route to manipulate topological superconducting properties of materials.
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN (S is a superconductor, N a superconducting proximized material and N is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.
The combination of superconductivity and the helical spin-momentum locking at the surface state of a topological insulator (TI) has been predicted to give rise to p-wave superconductivity and Majorana bound states. The superconductivity can be induced by the proximity effect of a an s-wave superconductor (S) into the TI. To probe the superconducting correlations inside the TI, dI/dV spectroscopy has been performed across such S-TI interfaces. Both the alloyed Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and the stoichiometric BiSbTeSe$_2$ have been used as three dimensional TI. In the case of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$, the presence of disorder induced electron-electron interactions can give rise to an additional zero-bias resistance peak. For the stoichiometric BiSbTeSe$_2$ with less disorder, tunnel barriers were employed in order to enhance the signal from the interface. The general observations in the spectra of a large variety of samples are conductance dips at the induced gap voltage, combined with an increased sub-gap conductance, consistent with p-wave predictions. The induced gap voltage is typically smaller than the gap of the Nb superconducting electrode, especially in the presence of an intentional tunnel barrier. Additional uncovered spectroscopic features are oscillations that are linearly spaced in energy, as well as a possible second order parameter component.
Superconducting topological crystalline insulators (TCI) are predicted to host new topological phases protected by crystalline symmetries, but available materials are insufficiently suitable for surface studies. To induce superconductivity at the surface of a prototypical TCI SnTe, we use molecular beam epitaxy to grow a heterostructure of SnTe and a high-Tc superconductor Fe(Te,Se), utilizing a buffer layer to bridge the large lattice mismatch between SnTe and Fe(Te,Se). Using low-temperature scanning tunneling microscopy and spectroscopy, we measure a prominent spectral gap on the surface of SnTe, and demonstrate its superconducting origin by its dependence on temperature and magnetic field. Our work provides a new platform for atomic-scale investigations of emergent topological phenomena in superconducting TCIs.
The proximity coupled topological insulator / superconductor (TI/SC) bilayer system is a representative system to realize topological superconductivity. In order to better understand this unique state and design devices from the TI/SC bilayer, a comprehensive understanding of the microscopic properties of the bilayer is required. In this work, a microwave Meissner screening study, which exploits a high-precision microwave resonator technique, is conducted on the SmB6/YB6 thin film bilayers as an example TI/SC system. The study reveals spatially dependent electrodynamic screening response of the TI/SC system that is not accessible to other techniques, from which the corresponding microscopic properties of a TI/SC bilayer can be obtained. The TI thickness dependence of the effective penetration depth suggests the existence of a bulk insulating region in the TI layer. The spatially dependent electrodynamic screening model analysis provides an estimate for the characteristic lengths of the TI/SC bilayer: normal penetration depth, normal coherence length, and the thickness of the surface states. We also discuss implications of these characteristic lengths on the design of a vortex Majorana device such as the radius of the vortex core, the energy splitting due to intervortex tunneling, and the minimum thickness required for a device.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
