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Conductance spectroscopy of a proximity induced superconducting topological insulator

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 Added by Marieke Snelder
 Publication date 2015
  fields Physics
and research's language is English




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We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$/Nb devices. The conductance spectra of the devices show the presence of a large induced gap in the STI as well as the induction of superconducting correlations in the normal part of the TI on the order of the Thouless energy. The shape of the conductance modulation around zero-energy varies between devices and can be explained by existing theory of s-wave-induced superconductivity in SNN (S is a superconductor, N a superconducting proximized material and N is a normal metal) devices. All the conductance spectra show a conductance dip at the induced gap of the STI.



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The combination of superconductivity and the helical spin-momentum locking at the surface state of a topological insulator (TI) has been predicted to give rise to p-wave superconductivity and Majorana bound states. The superconductivity can be induced by the proximity effect of a an s-wave superconductor (S) into the TI. To probe the superconducting correlations inside the TI, dI/dV spectroscopy has been performed across such S-TI interfaces. Both the alloyed Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$ and the stoichiometric BiSbTeSe$_2$ have been used as three dimensional TI. In the case of Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.3}$, the presence of disorder induced electron-electron interactions can give rise to an additional zero-bias resistance peak. For the stoichiometric BiSbTeSe$_2$ with less disorder, tunnel barriers were employed in order to enhance the signal from the interface. The general observations in the spectra of a large variety of samples are conductance dips at the induced gap voltage, combined with an increased sub-gap conductance, consistent with p-wave predictions. The induced gap voltage is typically smaller than the gap of the Nb superconducting electrode, especially in the presence of an intentional tunnel barrier. Additional uncovered spectroscopic features are oscillations that are linearly spaced in energy, as well as a possible second order parameter component.
Superconducting topological crystalline insulators (TCI) are predicted to host new topological phases protected by crystalline symmetries, but available materials are insufficiently suitable for surface studies. To induce superconductivity at the surface of a prototypical TCI SnTe, we use molecular beam epitaxy to grow a heterostructure of SnTe and a high-Tc superconductor Fe(Te,Se), utilizing a buffer layer to bridge the large lattice mismatch between SnTe and Fe(Te,Se). Using low-temperature scanning tunneling microscopy and spectroscopy, we measure a prominent spectral gap on the surface of SnTe, and demonstrate its superconducting origin by its dependence on temperature and magnetic field. Our work provides a new platform for atomic-scale investigations of emergent topological phenomena in superconducting TCIs.
180 - Fan Yang , Fanming Qu , Jie Shen 2012
We have studied the electron transport properties of topological insulator-related material Bi2Se3 near the superconducting Pb-Bi2Se3 interface, and found that a superconducting state is induced over an extended volume in Bi2Se3. This state can carry a Josephson supercurrent, and demonstrates a gap-like structure in the conductance spectra as probed by a normal-metal electrode. The establishment of the gap is not by confining the electrons into a narrow space close to the superconductor-normal metal interface, as previously observed in other systems, but presumably via electron-electron attractive interaction in Bi2Se3.
We present microscopic, self-consistent calculations of the superconducting order parameter and pairing correlations near the interface of an $s$-wave superconductor and a three-dimensional topological insulator with spin-orbit coupling. We discuss the suppression of the order parameter by the topological insulator and show that the equal-time pair correlation functions in the triplet channel, induced by spin-flip scattering at the interface, are of $p_xpm i p_y$ symmetry. We verify that the spectrum at sub-gap energies is well described by the Fu-Kane model. The sub-gap modes are viewed as interface states with spectral weight penetrating well into the superconductor. We extract the phenomenological parameters of the Fu-Kane model from microscopic calculations, and find they are strongly renormalized from the bulk material parameters. This is consistent with previous results of Stanescu et al for a lattice model using perturbation theory in the tunneling limit.
At an interface between a topological insulator (TI) and a conventional superconductor (SC), superconductivity has been predicted to change dramatically and exhibit novel correlations. In particular, the induced superconductivity by an $s$-wave SC in a TI can develop an order parameter with a $p$-wave component. Here we present experimental evidence for an unexpected proximity-induced novel superconducting state in a thin layer of the prototypical TI, Bi$_2$Se$_3$, proximity coupled to Nb. From depth-resolved magnetic field measurements below the superconducting transition temperature of Nb, we observe a local enhancement of the magnetic field in Bi$_2$Se$_3$ that exceeds the externally applied field, thus supporting the existence of an intrinsic paramagnetic Meissner effect arising from an odd-frequency superconducting state. Our experimental results are complemented by theoretical calculations supporting the appearance of such a component at the interface which extends into the TI. This state is topologically distinct from the conventional Bardeen-Cooper-Schrieffer state it originates from. To the best of our knowledge, these findings present a first observation of bulk odd-frequency superconductivity in a TI. We thus reaffirm the potential of the TI-SC interface as a versatile platform to produce novel superconducting states.
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