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Register a new userOptoelectronic cooling of mechanical modes in a semiconductor nanomembrane
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Optical cavity cooling of mechanical resonators has recently become a research frontier. The cooling has been realized with a metal-coated silicon microlever via photo-thermal force and subsequently with dielectric objects via radiation pressure. Here we report cavity cooling with a crystalline semiconductor membrane via a new mechanism, in which the cooling force arises from the interaction between the photo-induced electron-hole pairs and the mechanical modes through the deformation potential coupling. The optoelectronic mechanism is so efficient as to cool a mode down to 4 K from room temperature with just 50 uW of light and a cavity with a finesse of 10 consisting of a standard mirror and the sub-wavelength-thick semiconductor membrane itself. The laser-cooled narrow-band phonon bath realized with semiconductor mechanical resonators may open up a new avenue for photonics and spintronics devices.
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Single photon superradiance is a strong enhancement of spontaneous emission appearing when a single excitation is shared between a large number of two-level systems. This enhanced rate can be accompanied by a shift of the emission frequency, the cooperative Lamb shift, issued from the exchange of virtual photons between the emitters. In this work we present a semiconductor optoelectronic device allowing the observation of these two phenomena at room temperature. We demonstrate experimentally and theoretically that plasma oscillations in spatially separated quantum wells interact through real and virtual photon exchange. This gives rise to a superradiant mode displaying a large cooperative Lamb shift.
We study the cooling of a mechanical resonator (MR) that is capacitively coupled to a double quantum dot (DQD). The MR is cooled by the dynamical backaction induced by the capacitive coupling between the DQD and the MR. The DQD is excited by a microwave field and afterwards a tunneling event results in the decay of the excited state of the DQD. An important advantage of this system is that both the energy level splitting and the decay rate of the DQD can be well tuned by varying the gate voltage. We find that the steady average occupancy, below unity, of the MR can be achieved by changing both the decay rate of the excited state and the detuning between the transition frequency of the DQD and the microwave frequency, in analogy to the laser sideband cooling of an atom or trapped ion in atomic physics. Our results show that the cooling of the MR to the ground state is experimentally implementable.
We present a detailed experimental characterization of the spectral and spatial structure of the confined optical modes for oxide-apertured micropillar cavities, showing good-quality Hermite-Gaussian profiles, easily mode-matched to external fields. We further derive a relation between the frequency splitting of the transverse modes and the expected Purcell factor. Finally, we describe a technique to retrieve the profile of the confining refractive index distribution from the spatial profiles of the modes.
Nitrogen-vacancy (NV) centers in diamonds are interesting due to their remarkable characteristics that are well suited to applications in quantum-information processing and magnetic field sensing, as well as representing stable fluorescent sources. Multiple NV centers in nanodiamonds (NDs) are especially useful as biological fluorophores due to their chemical neutrality, brightness and room-temperature photostability. Furthermore, NDs containing multiple NV centers also have potential in high-precision magnetic field and temperature sensing. Coupling NV centers to propagating surface plasmon polariton (SPP) modes gives a base for lab-on-a-chip sensing devices, allows enhanced fluorescence emission and collection which can further enhance the precision of NV-based sensors. Here, we investigate coupling of multiple NV centers in individual NDs to the SPP modes supported by silver surfaces protected by thin dielectric layers and by gold V-grooves (VGs) produced via the self-terminated silicon etching. In the first case, we concentrate on monitoring differences in fluorescence spectra obtained from a source ND, which is illuminated by a pump laser, and from a scattering ND illuminated only by the fluorescence-excited SPP radiation. In the second case, we observe changes in the average NV lifetime when the same ND is characterized outside and inside a VG. Fluorescence emission from the VG terminations is also observed, which confirms the NV coupling to the VG-supported SPP modes.
Enhanced electron cooling is demonstrated in a strained-silicon/superconductor tunnel junction refrigerator of volume 40 um^3. The electron temperature is reduced from 300 mK to 174 mK, with the enhancement over an unstrained silicon control (300 mK to 258 mK) being attributed to the smaller electron-phonon coupling in the strained case. Modeling and the resulting predictions of silicon-based cooler performance are presented. Further reductions in the minimum temperature are expected if the junction sub-gap leakage and tunnel resistance can be reduced. However, if only tunnel resistance is reduced, Joule heating is predicted to dominate.
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