LiFeAs is unique among the broad family of FeAs-based superconductors, because it is superconducting with a rather large $T_csimeq 18$ K under ambient conditions although it is a stoichiometric compound. We studied the electrical transport on a high-quality single crystal. The resistivity shows quadratic temperature dependence at low temperature giving evidence for strong electron-electron scattering and a tendency towards saturation around room temperature. The Hall constant is negative and changes with temperature, what most probably arises from a van Hove singularity close to the Fermi energy in one of the hole-like bands. Using band structure calculations based on angular resolved photoemission spectra we are able to reproduce all the basic features of both the resistivity as well as the Hall effect data.
Super-high resolution laser-based angle-resolved photoemission measurements are carried out on LiFeAs superconductor to investigate its electron dynamics. Three energy scales at $sim$20 meV, $sim$34 meV and $sim$55 meV are revealed for the first time in the electron self-energy both in the superconducting state and normal state. The $sim$20 meV and $sim$34 meV scales can be attributed to the coupling of electrons with sharp bosonic modes which are most likely phonons. These observations provide definitive evidence on the existence of mode coupling in iron-based superconductors.
We report resistivity and the Hall effect measurements in the normal and superconducting states of MgB2 single crystal. The resistivity has been found to be anisotropic with slightly temperature dependent resistivity ratio of about 3.5. The Hall constant, with a magnetic field parallel to the Mg and B sheets is negative in contrast to the hole-like Hall response with a field directed along the c-axis indicating presence of both types of charge carriers and, thus, multi-band electronic structure of MgB2. The Hall effect in the mixed state shows no sign change anomaly reproducing the Hall effect behavior in clean limit type-II superconductors.
We analyze existing optical data in the superconducting state of LiFeAs at $T =$ 4 K, to recover its electron-boson spectral density. A maximum entropy technique is employed to extract the spectral density $I^2chi(omega)$ from the optical scattering rate. Care is taken to properly account for elastic impurity scattering which can importantly affect the optics in an $s$-wave superconductor, but does not eliminate the boson structure. We find a robust peak in $I^2chi(omega)$ centered about $Omega_R cong$ 8.0 meV or 5.3 $k_B T_c$ (with $T_c =$ 17.6 K). Its position in energy agrees well with a similar structure seen in scanning tunneling spectroscopy (STS). There is also a peak in the inelastic neutron scattering (INS) data at this same energy. This peak is found to persist in the normal state at $T =$ 23 K. There is evidence that the superconducting gap is anisotropic as was also found in low temperature angular resolved photoemission (ARPES) data.
Umklapp processes play a fundamental role as the only intrinsic mechanism that allows electrons to transfer momentum to the crystal lattice and, therefore, provide a finite electrical resistance in pure metals. However, umklapp scattering has proven to be elusive in experiment as it is easily obscured by other dissipation mechanisms. Here we show that electron-electron umklapp scattering dominates the transport properties of graphene-on-boron-nitride superlattices over a wide range of temperatures and carrier densities. The umklapp processes cause giant excess resistivity that rapidly increases with increasing the superlattice period and are responsible for deterioration of the room-temperature mobility by more than an order of magnitude as compared to standard, non-superlattice graphene devices. The umklapp scattering exhibits a quadratic temperature dependence accompanied by a pronounced electron-hole asymmetry with the effect being much stronger for holes rather than electrons. Aside from fundamental interest, our results have direct implications for design of possible electronic devices based on heterostructures featuring superlattices.
The mechanism by which the Fermi surface of high-$T_c$ cuprates undergoes a dramatic change from a large hole-like barrel to small arcs or pockets on entering the pseudogap phase remains a question of fundamental importance. Here we calculate the normal-state Hall coefficient from the resonating-valence-bond spin-liquid model developed by Yang, Rice and Zhang. In this model, reconstruction of the Fermi surface occurs via an intermediate regime where the Fermi surface consists of both hole- and electron-like pockets. We find that the doping $(x)$ dependence of the Hall number transitions from $1+x$ to $x$ over this narrow doping range. At low temperatures, a switch from a downturn to an upturn in the Hall coefficient signals the departure of the electron-like pockets from the Fermi surface.