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Register a new userDetrapping and retrapping of free carriers in nominally pure single crystal GaP, GaAs and 4H-SiC semiconductors under light illumination at cryogenic temperatures
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We report on extremely sensitive measurements of changes in the microwave properties of high purity non-intentionally-doped single-crystal semiconductor samples of gallium phosphide, gallium arsenide and 4H-silicon carbide when illuminated with light of different wavelengths at cryogenic temperatures. Whispering gallery modes were excited in the semiconductors whilst they were cooled on the coldfinger of a single-stage cryocooler and their frequencies and Q-factors measured under light and dark conditions. With these materials, the whispering gallery mode technique is able to resolve changes of a few parts per million in the permittivity and the microwave losses as compared with those measured in darkness. A phenomenological model is proposed to explain the observed changes, which result not from direct valence to conduction band transitions but from detrapping and retrapping of carriers from impurity/defect sites with ionization energies that lay in the semiconductor band gap. Detrapping and retrapping relaxation times have been evaluated from comparison with measured data.
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We describe a two-color pump-probe scanning magneto-optical Kerr effect (MOKE) microscope which we have developed to investigate electron spin phenomena in semiconductors at cryogenic temperatures with picosecond time and micrometer spatial resolution. The key innovation of our microscope is the usage of an ultrafast `white light supercontinuum fiber-laser source which provides access to the whole visible and near-infrared spectral range. Our Kerr microscope allows for the independent selection of the excitation and detection energy while avoiding the necessity to synchronize the pulse trains of two separate picosecond laser systems. The ability to independently tune the pump and probe wavelength enables the investigation of the influence of excitation energy on the optically induced electron spin dynamics in semiconductors. We demonstrate picosecond real-space imaging of the diffusive expansion of optically excited electron spin packets in a (110) GaAs quantum well sample to illustrate the capabilities of the instrument.
We report the time resolution of 100 $rm mu m$ 4H-SiC PIN detectors which are fabricated by Nanjing University (NJU). The time responses for $rm beta$ particle from $rm ^{90}$Sr source are investigated for the detection of the minimum ionizing particles (MIPs). The influences of different reverse voltages which correspond to carrier velocity and device sizes which correlate with capacitance for time resolution are studied. We acquired a time resolution (94$pm$1) ps for 100 $rm mu m$ 4H-SiC PIN detector. A fast simulation software - RASER (RAdiation SEmiconductoR) has been developed to simulate the time resolution of 4H-SiC detector, and the simulation has been validated by the waveform comparison of RASER simulation and measured data. The simulated time resolution is (53 $pm$ 1) ps after consider the intrinsic leading contributions of detector in time resolution.
We propose paramagnetic semiconductors as active media for refrigeration at cryogenic temperatures by adiabatic demagnetization. The paramagnetism of impurity dopants or structural defects can provide the entropy necessary for refrigeration at cryogenic temperatures. We present a simple model for the theoretical limitations to specific entropy and cooling power achievable by demagnetization of various semiconductor systems. Performance comparable to that of the hydrate (CMN) is predicted.
The Ion Beam Induced Charge Collection (IBIC) technique was used to map the charge collection efficiency (CCE) of a 4H-SiC photodetector with coplanar interdigitated Schottky barrier electrodes and a common ohmic contact on the back side. IBIC maps were obtained using focused proton beams with energies of 0.9 MeV and 1.5 MeV, at different bias voltages and different sensitive electrode configurations (charge collection at the top Schottky or at the back Ohmic contact). These different experimental conditions have been modeled using a two dimensional finite element code to solve the adjoint carrier continuity equations and the results obtained have been compared with experimental results. The excellent consistency between the simulated and experimental CCE maps allows an exhaustive interpretation of the charge collection mechanisms occurring in pixellated or strip detectors.
In the described device, the thermal emissivity or absorptivity of the sample is measured by substitution of the radiative heat flow between two parallel surfaces by thermal output of a heater. Fast measurements of the mutual emissivity for the range of the temperature of the radiating surface 25 K-150 K are possible. The absorbing surface has a temperature between 5 K and 10 K when LHe is used as cryoliquid. The desired measurement sensitivity is 1 mK for temperature and 0.1 {mu}W for heat power, respectively. The diameter of the whole device is 50 mm and so it is possible to use a commercial dewar can for the cooling. The form of the sample is a round plate 40 mm in diameter and 1 mm in thickness with one tested side. The emissivity and its temperature dependency for various surface treatments can be checked immediately before application in a cryogenic system.
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