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Register a new userFirst principle study of intrinsic defects in hexagonal tungsten carbide
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Xiang-Shan Kong
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The characteristics of intrinsic defects are important for the understanding of self-diffusion processes, mechanical strength, brittleness, and plasticity of tungsten carbide, which present in the divertor of fusion reactors. Here, we use first-principles calculations to investigate the stability of point defects and their complexes in WC. Our calculation results confirm that the formation energies of carbon defects are much lower than that of tungsten defects. The outward relaxations around vacancy are found. Both interstitial carbon and interstitial tungsten atom prefer to occupy the carbon basal plane projection of octahedral interstitial site. The results of isolated carbon defect diffusion show that the carbon vacancy stay for a wide range of temperature because of extremely high diffusion barriers, while carbon interstitial migration is activated at lower temperatures for its considerable lower activation energy. These results provide evidence for the presumption that the 800K stage is attributed by the annealing out of carbon vacancies by long-range migration.
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Generation of single photons has been demonstrated in several systems. However, none of them satisfies all the conditions, e.g. room temperature functionality, telecom wavelength operation, high efficiency, as required for practical applications. Here, we report the fabrication of light emitting diodes (LEDs) based on intrinsic defects in silicon carbide (SiC). To fabricate our devices we used a standard semiconductor manufacturing technology in combination with high-energy electron irradiation. The room temperature electroluminescence (EL) of our LEDs reveals two strong emission bands in visible and near infrared (NIR), associated with two different intrinsic defects. As these defects can potentially be generated at a low or even single defect level, our approach can be used to realize electrically driven single photon source for quantum telecommunication and information processing.
Defects are inevitably present in two-dimensional (2D) materials and usually govern their various properties. Here a comprehensive density functional theory-based investigation of 7 kinds of point defects in a recently produced {gamma} allotrope of 2D phosphorus carbide ({gamma}-PC) is conducted. The defects, such as antisites, single C or P, and double C and P and C and C vacancies, are found to be stable in {gamma}-PC, while the Stone-Wales defect is not presented in {gamma}-PC due to its transition metal dichalcogenides-like structure. The formation energies, stability, and surface density of the considered defect species as well as their influence on the electronic structure of {gamma}-PC is systematically identified. The formation of point defects in {gamma}-PC is found to be less energetically favourable then in graphene, phosphorene, and MoS2. Meanwhile, defects can significantly modulate the electronic structure of {gamma}-PC by inducing hole/electron doping. The predicted scanning tunneling microscopy images suggest that most of the point defects are easy to distinguish from each other and that they can be easily recognized in experiments.
Topological Dirac and Weyl semimetals not only host quasiparticles analogous to the elementary fermionic particles in high-energy physics, but also have nontrivial band topology manifested by exotic Fermi arcs on the surface. Recent advances suggest new types of topological semimetals, in which spatial symmetries protect gapless electronic excitations without high-energy analogy. Here we observe triply-degenerate nodal points (TPs) near the Fermi level of WC, in which the low-energy quasiparticles are described as three-component fermions distinct from Dirac and Weyl fermions. We further observe the surface states whose constant energy contours are pairs of Fermi arcs connecting the surface projection of the TPs, proving the nontrivial topology of the newly identified semimetal state.
The low energy structures of irradiation-induced defects have been studied in detail, as these determine the available modes by which a defect can diffuse or relax. As a result, there are many studies concerning the relative energies of possible defect structures, and empirical potentials are commonly fitted to or evaluated with respect to these energies. But recently [Dudarev et al Nuclear Fusion 2018], we have shown how to determine the stresses, strains and swelling of reactor components under irradiation from the elastic properties of ensembles of irradiation-induced defects. These elastic properties have received comparatively little attention. Here we evaluate relaxation volumes of irradiation-induced defects in tungsten computed with empirical potentials, and compare to density functional theory results where available. Different empirical potentials give different results, but some potential-independent trends in relaxation volumes can be identified. We show that the relaxation volume of small defects can be predicted to within 10% from their point-defect count. For larger defects we provide empirical fits for the relaxation volume of as a function of size. We demonstrate that the relaxation volume associated with a single primary-damage cascade can be estimated from the primary knock-on atom (PKA) energy. We conclude that while annihilation of vacancy- and interstitial- character defects will invariably reduce the total relaxation volume of the cascade debris, empirical potentials disagree whether coalescence of defects will reduce or increase the total relaxation volume.
We present a first-principles computational study of cation-Se $Sigma$3 (112) grain boundaries in CuGaSe$_2$. We discuss the structure of these grain boundaries, as well as the effect of native defects and Na impurities on their electronic properties. The formation energies show that the defects will tend to form preferentially at the grain boundaries, rather than in the grain interiors. We find that in Ga-rich growth conditions Cu vacancies as well as Ga at Cu and Cu at Ga antisites are mainly responsible for having the equilibrium Fermi level pinned toward the middle of the gap, resulting in carrier depletion. The Na at Cu impurity in its +1 charge state contributes to this. In Ga-poor growth conditions, on the other hand, the formation energies of Cu vacancies and Ga at Cu antisites are comparatively too high for any significant influence on carrier density or on the equilibrium Fermi level position. Thus, under these conditions, the Cu at Ga antisites give rise to a $p$-type grain boundary. Also, their formation energy is lower than the formation energy of Na at Cu impurities. Thus, the latter will fail to act as a hole barrier preventing recombination at the grain boundary, in contrast to what occurs in CuInSe$_2$ grain boundaries. We also discuss the effect of the defects on the electronic properties of bulk CuGaSe$_2$, which we assume reflect the properties of the grain interiors.
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