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Register a new userCritical current diffraction pattern of SIFS Josephson junctions with step-like F-layer
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We present the latest generation of superconductor-insulator-ferromagnet-superconductor Josephson tunnel junctions with a step-like thickness of the ferromagnetic (F) layer. The F-layer thicknesses $d_1$ and $d_2$ in both halves were varied to obtain different combinations of positive and negative critical current densities $j_{c,1}$ and $j_{c,2}$. The measured dependences of the critical current on applied magnetic field can be well described by a model which takes into account different critical current densities (obtained from reference junctions) and different net magnetization of the multidomain ferromagnetic layer in both halves.
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We investigate superconductor/insulator/ferromagnet/superconductor (SIFS) tunnel Josephson junctions in the dirty limit, using the quasiclassical theory. We consider the case of a strong tunnel barrier such that the left S layer and the right FS bilayer are decoupled. We calculate quantitatively the density of states (DOS) in the FS bilayer for arbitrary length of the ferromagnetic layer, using a self-consistent numerical method. We compare these results with a known analytical DOS approximation, which is valid when the ferromagnetic layer is long enough. Finally we calculate quantitatively the current-voltage characteristics of a SIFS junction.
We consider theoretically and numerically magnetic field dependencies of the maximum supercurrent across Josephson tunnel junctions with spatially alternating critical current density. We find that two flux-penetration fields and one-splinter-vortex equilibrium state exist in long junctions.
We treat theoretically Shapiro steps in tunnel Josephson junctions with spatially alternating critical current density. Explicit analytical formulas for the width of the first integer (normal) and half-integer (anomalous) Shapiro steps are derived for short junctions. We develop coarse-graining approach, which describes Shapiro steps in the voltage-current curves of the asymmetric grain boundaries in YBCO thin films and different superconductor-ferromagnet-superconductor Josephson-type heterostructures.
Josephson junctions with ferromagnetic layers are vital elements in a new class of cryogenic memory devices. One style of memory device contains a spin valve with one hard magnetic layer and one soft layer. To achieve low switching fields, it is advantageous for the soft layer to have low magnetization and low magnetocrystalline anisotropy. A candidate class of materials that fulfills these criteria is the Pd$_{1-x}$Fe$_{x}$ alloy system with low Fe concentrations. We present studies of micron-scale elliptically-shaped Josephson junctions containing Pd$_{97}$Fe$_{3}$ layers of varying thickness. By applying an external magnetic field, the critical current of the junctions are found to follow characteristic Fraunhofer patterns. The maximum value of the critical current, extracted from the Fraunhofer patterns, oscillates as a function of the ferromagnetic barrier thickness, indicating transitions in the phase difference across the junction between values of zero and $pi$.
We study long Josephson junctions with the critical current density alternating along the junction. New equilibrium states, which we call the field synchronized or FS states, are shown to exist if the applied field is from narrow intervals centered around equidistant series of resonant fields, $H_m$. The values of $H_m$ are much higher than the flux penetration field, $H_s$. The flux per period of the alternating critical current density, $phi_i$, is fixed for each of the FS states. In the $m$-th FS state the value of $phi_i$ is equal to an integer amount of flux quanta, $phi_i =mphi_0$. Two types of single Josephson vortices carrying fluxes $phi_0$ or/and $phi_0/2$ can exist in the FS states. Specific stepwise resonances in the current-voltage characteristics are caused by periodic motion of these vortices between the edges of the junction.
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