No Arabic abstract
We calculate the phase, the temperature and the junction length dependence of the supercurrent for ballistic graphene Josephson-junctions. For low temperatures we find non-sinusoidal dependence of the supercurrent on the superconductor phase difference for both short and long junctions. The skewness, which characterizes the deviation of the current-phase relation from a simple sinusoidal one, shows a linear dependence on the critical current for small currents. We discuss the similarities and differences with respect to the classical theory of Josephson junctions, where the weak link is formed by a diffusive or ballistic metal. The relation to other recent theoretical results on graphene Josephson junctions is pointed out and the possible experimental relevance of our work is considered as well.
Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices.
Short ballistic graphene Josephson junctions sustain superconducting current with a non-sinusoidal current-phase relation up to a critical current threshold. The current-phase relation, arising from proximitized superconductivity, is gate-voltage tunable and exhibits peculiar skewness observed in high quality graphene superconductors heterostructures with clean interfaces. These properties make graphene Josephson junctions promising sensitive quantum probes of microscopic fluctuations underlying transport in two-dimensions. We show that the power spectrum of the critical current fluctuations has a characteristic $1/f$ dependence on frequency, $f$, probing two points and higher correlations of carrier density fluctuations of the graphene channel induced by carrier traps in the nearby substrate. Tunability with the Fermi level, close to and far from the charge neutrality point, and temperature dependence of the noise amplitude are clear fingerprints of the underlying material-inherent processes. Our results suggest a roadmap for the analysis of decoherence sources in the implementation of coherent devices by hybrid nanostructures.
We report the first experimental observation of the two-node thickness dependence of the critical current in Josephson junctions with a ferromagnetic interlayer. Vanishings of the critical current correspond to transitions into pi-state and back into conventional 0-state. The experimental data allow to extract the superconducting order parameter oscillation period and the pair decay length in the ferromagnet. We develope a theoretical approach based on Usadel equations, which takes into account the spin-flip scattering. Results of numerical calculations are in good agreement with the experimental data.
We present low-temperature measurements of the low-frequency $1/f$ noise arising from an ensemble of two-level fluctuators in the oxide barrier of Al/AlO$_{x}$/Al Josephson junctions. The fractional noise power spectrum of the critical-current and normal-state resistance have similar magnitudes and scale linearly with temperature, implying an equivalence between the two. Compiling our results and published data, we deduce the area and temperature scaling of the noise for AlO$_{x}$ barrier junctions. We find that the density of two-level fluctuators in the junction barrier is similar to the typical value in glassy systems. We discuss the implications and consistency with recent qubit experiments.
In a class of type II superconductor films, the critical current is determined by the Bean-Livingston barrier posed by the film surfaces to vortex penetration into the sample. A bulk property thus depends sensitively on the surface or interface to an adjacent material. We theoretically investigate the dependence of vortex barrier and critical current in such films on the Rashba spin-orbit coupling at their interfaces with adjacent materials. Considering an interface with a magnetic insulator, we find the spontaneous supercurrent resulting from the Zeeman field and interfacial spin-orbit coupling to substantially modify the vortex surface barrier. Thus, we show that the critical currents in superconductor-magnet heterostructures can be controlled, and even enhanced, via the interfacial spin-orbit coupling. Since the latter can be controlled via a gate voltage, our analysis predicts a class of heterostructures amenable to gate-voltage modulation of superconducting critical currents. It also sheds light on the recently observed gate-voltage enhancement of critical current in NbN superconducting films.