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Josephson current in ballistic Nb/InAs/Nb highly transmissive junctions

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 Added by Francesco Giazotto
 Publication date 2002
  fields Physics
and research's language is English




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Highly transmissive ballistic junctions are demonstrated between Nb and the two-dimensional electron gas formed at an InAs/AlSb heterojunction. A reproducible fabrication protocol is presented yielding high critical supercurrent values. Current-voltage characteristics were measured down to 0.4 K and the observed supercurrent behavior was analyzed within a ballistic model in the clean limit. This investigation allows us to demonstrate an intrinsic interface transmissivity approaching 90%. The reproducibility of the fabrication protocol makes it of interest for the experimental study of InAs-based superconductor-semiconductor hybrid devices.



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The physics of the $pi$ phase shift in ferromagnetic Josephson junctions may enable a range of applications for spin-electronic devices and quantum computing. We investigate transitions from ``0 to ``$pi$ states in Nb/Fe/Nb Josephson junctions by varying the Fe barrier thickness from 0.5 nm to 5.5 nm. From magnetic measurements we estimate for Fe a magnetic dead layer of about 1.1 nm. By fitting the characteristic voltage oscillations with existing theoretical models we extrapolate an exchange energy of 256 meV, a Fermi velocity of $1.98 times 10^5$ m/s and an electron mean free path of 6.2 nm, in agreement with other reported values. From the temperature dependence of the $I_CR_N$ product we show that its decay rate exhibits a nonmonotonic oscillatory behavior with the Fe barrier thickness.
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Electrical properties of Josephson junctions Nb/FeSi/Nb with superconductor/ferromagnet (S/F)interfaces are presented. Due to Andreev reflection the nearly exact quadruple enhancement of the tunnel junction differential conductance compared with that of the normal state was achieved. The transparency of the S/F interfaces in our junctions was estimated to be close to unity. This almost ideal value is obtained due to the use of a very smooth amorphous magnetic FeSi alloy for the barrier preparation. The real structure of the Nb/FeSi/Nb tunnel junction is described as a S/F/I/F/S junction. Also Nb/FeSi/Si/Nb Josephson junctions were investigated and the results found on these junctions confirm the effects observed in Nb/FeSi/Nb.
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