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Register a new userSpin diffusion in the Mn2+ ion system of II-VI diluted magnetic semiconductor heterostructures
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The magnetization dynamics in diluted magnetic semiconductor heterostructures based on (Zn,Mn)Se and (Cd,Mn)Te has been studied experimentally by optical methods and simulated numerically. In the samples with nonhomogeneous magnetic ion distribution this dynamics is contributed by spin-lattice relaxation and spin diffusion in the Mn spin system. The spin diffusion coefficient of 7x10^(-8) cm^2/s has been evaluated for Zn(0.99)Mn(0.01)Se from comparison of experimental and numerical results. Calculations of the giant Zeeman splitting of the exciton states and the magnetization dynamics in the ordered alloys and parabolic quantum wells fabricated by the digital growth technique show perfect agreement with the experimental data. In both structure types the spin diffusion has an essential contribution to the magnetization dynamics.
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We study theoretically the ultrafast spin dynamics of II-VI diluted magnetic quantum wells in the presence of spin-orbit interaction. We extend a recent study where it was shown that the spin-orbit interaction and the exchange sd coupling in bulk and quantum wells can compete resulting in qualitatively new dynamics when they act simultaneously. We concentrate on Hg$_{1-x-y}$Mn$_x$Cd$_y$Te quantum wells, which have a highly tunable Rashba spin-orbit coupling. Our calculations use a recently developed formalism which incorporates electronic correlations originating from the exchange $sd$-coupling. We find that the dependence of electronic spin oscillations on the excess energy changes qualitatively depending on whether or not the spin-orbit interaction dominates or is of comparable strength with the sd interaction.
We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/(Cd,Mg)Te quantum wells (QWs) and (In,Ga)As/InAlAs:Mn QWs belonging to the well known II-VI and III-V DMS material systems, as well as, in heterovalent AlSb/InAs/(Zn,Mn)Te QWs which represent a promising combination of II-VI and III-V semiconductors. Experimental data and developed theory demonstrate that the photocurrent originates from a spin-dependent scattering of free carriers by static defects or phonons in the Drude absorption of radiation and subsequent relaxation of carriers. We show that in DMS structures the efficiency of the current generation is drastically enhanced compared to non-magnetic semiconductors. The enhancement is caused by the exchange interaction of carrier spins with localized spins of magnetic ions resulting, on the one hand, in the giant Zeeman spin-splitting, and, on the other hand, in the spin-dependent carrier scattering by localized Mn2+ ions polarized by an external magnetic field.
We report on the dynamics of optically induced nuclear spin polarization in individual CdTe/ZnTe quantum dots loaded with one electron by modulation doping. The fine structure of the hot trion (charged exciton $X^-$ with an electron in the $P$-shell) is identified in photoluminescence excitation spectra. A negative polarisation rate of the photoluminescence, optical pumping of the resident electron and the built-up of dynamic nuclear spin polarisation (DNSP) are observed in time-resolved optical pumping experiments when the quantum dot is excited at higher energy than the hot trion triplet state. The time and magnetic field dependence of the polarisation rate of the $X^-$ emission allows to probe the dynamics of formation of the DNSP in the optical pumping regime. We demonstrate using time-resolved measurements that the creation of a DNSP at B=0T efficiently prevents longitudinal spin relaxation of the electron caused by fluctuations of the nuclear spin bath. The DNSP is built in the microsecond range at high excitation intensity. A relaxation time of the DNSP in about 10 microseconds is observed at $B=0T$ and significantly increases under a magnetic field of a few milli-Tesla. We discuss mechanisms responsible for the fast initialisation and relaxation of the diluted nuclear spins in this system.
Tunable magnetic interactions in high-mobility nonmagnetic semiconductor heterostructures are centrally important to spin-based quantum technologies. Conventionally, this requires incorporation of magnetic impurities within the two-dimensional (2D) electron layer of the heterostructures, which is achieved either by doping with ferromagnetic atoms, or by electrostatically printing artificial atoms or quantum dots. Here we report experimental evidence of a third, and intrinsic, source of localized spins in high-mobility GaAs/AlGaAs heterostructures, which are clearly observed in the limit of large setback distance (=80 nm) in modulation doping. Local nonequilibrium transport spectroscopy in these systems reveals existence of multiple spins, which are located in a quasi-regular manner in the 2D Fermi sea, and mutually interact at temperatures below 100 milliKelvin via the Ruderman-Kittel-Kasuya-Yosida (RKKY) indirect exchange. The presence of such a spin-array, whose microscopic origin appears to be disorder-bound, simulates a 2D lattice-Kondo system with gate-tunable energy scales.
We report on a study of the temperature-dependence of current-induced effective magnetic fields due to spin-orbit interactions in the diluted ferromagnetic semiconductor (Ga,Mn)As. Contributions from the effective fields as well as from the anomalous Nernst effect are evident in the difference between transverse resistance measurements as a function of an external magnetic field for opposite orientations of the applied current. We separately extract these contributions by fitting to a model of coherently rotating magnetization. The component of the effective field with Dresselhaus symmetry is substantially enhanced with increasing temperature, while no significant temperature-dependence is observed for the component with Rashba symmetry.
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