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Register a new userTemperature dependence of spin-orbit torque effective fields in the diluted magnetic semiconductor (Ga,Mn)As
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We report on a study of the temperature-dependence of current-induced effective magnetic fields due to spin-orbit interactions in the diluted ferromagnetic semiconductor (Ga,Mn)As. Contributions from the effective fields as well as from the anomalous Nernst effect are evident in the difference between transverse resistance measurements as a function of an external magnetic field for opposite orientations of the applied current. We separately extract these contributions by fitting to a model of coherently rotating magnetization. The component of the effective field with Dresselhaus symmetry is substantially enhanced with increasing temperature, while no significant temperature-dependence is observed for the component with Rashba symmetry.
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The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic X-ray scattering (RIXS). From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_3$ RIXS spectra can be explained by $d$-$d$ excitations from the Mn$^{3+}$ ground state, dominated by charge-transferred states, rather than a Mn$^{2+}$ ground state. Unlike archetypical $d$-$d$ excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the $d$-$d$ excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through hybridization of the Mn $3d$ orbital with the ligand band.
We perform a theoretical study, using {it ab initio} total energy density-functional calculations, of the effects of disorder on the $Mn-Mn$ exchange interactions for $Ga_{1-x}Mn_xAs$ diluted semiconductors. For a 128 atoms supercell, we consider a variety of configurations with 2, 3 and 4 Mn atoms, which correspond to concentrations of 3.1%, 4.7%, and 6.3%, respectively. In this way, the disorder is intrinsically considered in the calculations. Using a Heisenberg Hamiltonian to map the magnetic excitations, and {it ab initio} total energy calculations, we obtain the effective $JMn$, from first ($n=1$) all the way up to sixth ($n=6$) neighbors. Calculated results show a clear dependence in the magnitudes of the $JMn$ with the Mn concentration $x$. Also, configurational disorder and/or clustering effects lead to large dispersions in the Mn-Mn exchange interactions, in the case of fixed Mn concentration. Moreover, theoretical results for the ground-state total energies for several configurations indicate the importance of a proper consideration of disorder in treating temperature and annealing effects.
We investigate the influence of magnons on the temperature-dependence and the anisotropy of the spin-orbit torque (SOT). For this purpose we use 3rd order perturbation theory in the framework of the Keldysh formalism in order to derive suitable equations to compute the magnonic SOT. We find several contributions to the magnonic SOT, which depend differently on the spin-wave stiffness $mathcal{A}$ and on the temperature $T$, with the dominating contribution scaling like $T^{2}/mathcal{A}^{2}$. Based on this formalism we compute the magnonic SOT in the ferromagnetic Rashba model. For large Rashba parameters the magnonic SOT is strongly anisotropic and for small quasiparticle broadening it may become larger than the non-magnonic SOT.
We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn)As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferro- magnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate mod- ifications to take a nonuniform distribution of holes and Mn cations into account. The described here effects are of practical importance for employing thin and ultrathin layers of (Ga,Mn)As or relative compounds in concept spintronics devices, like resonant tunneling devices in particular.
We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band.
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