Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDramatic effective mass reduction driven by strong electronic correlations
142
0
0.0
(
0
)
Authors
C. Monney
Ask ChatGPT about the research
No Arabic abstract
We present angle-resolved photoemission experiments on 1T-TiSe2 at temperatures ranging from 13K to 288K. The data evidence a dramatic renormalization of the conduction band below 100K, whose origin can be explained with the exciton condensate phase model. The renormalization translates into a substantial effective mass reduction of the dominant charge carriers and can be directly related to the low temperature downturn of the resistivity of 1T-TiSe2. This observation is in opposition to the common belief that strong interactions produce heavier quasiparticles through an increased effective mass.
rate research
Read More
It has long been thought that strongly correlated systems are adiabatically connected to their noninteracting counterpart. Recent developments have highlighted the fallacy of this traditional notion in a variety of settings. Here we use a class of strongly correlated electron systems as a platform to illustrate the kind of quantum phases and fluctuations that are created by strong correlations. Examples are quantum critical states that violate the Fermi liquid paradigm, unconventional superconductivity that goes beyond the BCS framework, and topological semimetals induced by the Kondo interaction. We assess the prospect of designing other exotic phases of matter, by utilizing alternative degrees of freedom or alternative interactions, and point to the potential of these correlated states for quantum technology.
We describe a method for deriving effective low-energy theories of electronic interactions at graphene edges. Our method is applicable to general edges of honeycomb lattices (zigzag, chiral, and even disordered) as long as localized low-energy states (edge states) are present. The central characteristic of the effective theories is a dramatically reduced number of degrees of freedom. As a consequence, the solution of the effective theory by exact diagonalization is feasible for reasonably large ribbon sizes. The quality of the involved approximations is critically assessed by comparing the correlation functions obtained from the effective theory with numerically exact quantum Monte-Carlo calculations. We discuss effective theories of two levels: a relatively complicated fermionic edge state theory and a further reduced Heisenberg spin model. The latter theory paves the way to an efficient description of the magnetic features in long and structurally disordered graphene edges beyond the mean-field approximation.
Electron correlations amplify quantum fluctuations and, as such, they have been recognized as the origin of a rich landscape of quantum phases. Whether and how they lead to gapless topological states is an outstanding question, and a framework that allows for determining novel phases and identifying new materials is in pressing need. Here we advance a general approach, in which strong correlations cooperate with crystalline symmetry to drive gapless topological states. We test this design principle by exploring Kondo lattice models and materials whose space group symmetries may promote different kinds of electronic degeneracies, with a particular focus on square-net systems. Weyl-Kondo nodal-line semimetals -- with nodes pinned to the Fermi energy -- are identified in both two and three dimensions. We apply the approach to identify materials for the realization of these correlation-driven topological semimetal phases. Our findings illustrate the potential of the proposed design principle to guide the search for new topological phases and materials in a broad range of strongly correlated systems.
We analyze the transformation from insulator to metal induced by thermal fluctuations within the Falicov-Kimball model. Using the Dynamic Mean Field Theory (DMFT) formalism on the Bethe lattice we find rigorously the temperature dependent Density of States ($DOS$) at half filling in the limit of high dimensions. At zero temperature (T=0) the system is ordered to form the checkerboard pattern and the $DOS$ has the gap $Delta$ at the Fermi level $varepsilon_F=0$, which is proportional to the interaction constant $U$. With an increase of $T$ the $DOS$ evolves in various ways that depend on $U$. For $U>U_{cr}$ the gap persists for any $T$ (then $Delta >0$), so the system is always an insulator. However, if $U < U_{cr}$, two additional subbands develop inside the gap. They become wider with increasing $T$ and at a certain $U$-dependent temperature $T_{MI}$ they join with each other at $varepsilon_F$. Since above $T_{MI}$ the $DOS$ is positive at $varepsilon_F$, we interpret $T_{MI}$ as the transformation temperature from insulator to metal. It appears, that $T_{MI}$ approaches the order-disorder phase transition temperature $T_{O-DO}$ when $U$ is close to 0 or $ U_{cr}$, but $T_{MI}$ is substantially lower than $T_{O-DO}$ for intermediate values of $U$. Having calculated the temperature dependent $DOS$ we study thermodynamic properties of the system starting from its free energy $F$. Then we find how the order parameter $d$ and the gap $Delta $ change with $T$ and we construct the phase diagram in the variables $T$ and $U$, where we display regions of stability of four different phases: ordered insulator, ordered metal, disordered insulator and disordered metal. Finally, we use a low temperature expansion to demonstrate the existence of a nonzero DOS at a characteristic value of U on a general bipartite lattice.
Strong electronic correlations related to a repulsive local interaction suppress the electronic compressibility in a single-band model, and the capacitance of a corresponding metallic film is directly related to its electronic compressibility. Both statements may be altered significantly when two extensions to the system are implemented which we investigate here: (i) we introduce an attractive nearest-neighbor interaction $V$ as antagonist to the repulsive on-site repulsion $U$, and (ii) we consider nano-structured multilayers (heterostructures) assembled from two-dimensional layers of these systems. We determine the respective total compressibility $kappa$ and capacitance $C$ of the heterostructures within a strong coupling evaluation, which builds on a Kotliar-Ruckenstein slave-boson technique. Whereas the capacitance $C(n)$ for electronic densities $n$ close to half-filling is suppressed---illustrated by a correlation induced dip in $C(n)$---it may be appreciably enhanced close to a van Hove singularity. Moreover, we show that the capacitance may be a non-monotonic function of $U$ close to half-filling for both attractive and repulsive $V$. The compressibility $kappa$ can differ from $C$ substantially, as $kappa$ is very sensitive to internal electrostatic energies which in turn depend on the specific set-up of the heterostructure. In particular, we show that a capacitor with a polar dielectric has a smaller electronic compressibility and is more stable against phase separation than a standard non-polar capacitor with the same capacitance.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
