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Register a new userPreparation of electron-doped La(2-x)CexCuO4 thin films with various Ce doping by dc magnetron sputtering
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A series of c-axis oriented electron-doped high-Tc superconducting La(2-x)CexCuO4 thin films, from heavily underdoped x=0.06 to heavily overdoped x=0.19, have been synthesized by dc magnetron sputtering technique on (100) SrTiO3 substrates. The influence of various fabrication conditions, such as the deposition temperature and the deposition rate, etc., on the quality of the thin films has been scrutinized. We find that the quality of the films is less sensitive to the deposition temperature in the overdoped region than that in the underdoped region. In the phase diagram of Tc(x), the superconducting dome indicates that the optimally doping level is at the point x=0.105 with the transition temperature Tc0 = 26.5 K. Further more, both the disappearance of the upturn in the $rho_{xx}$(T) curve at low temperature under H=10 T and the positive differential Hall coefficient, $R_H=d rho_{xy}/dH$, are observed around x = 0.15, implying a possible rearrangement of Fermi surface at this doping level.
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A series of electron-doped cuprate La(2-x)CexCuO4 thin films with different thicknesses have been fabricated and their annealing time are adjusted carefully to ensure the highest superconducting transition temperature. The transport measurements indicate that, with the increase of the film thickness (<100 nm), the residual resistivity increases and the Hall coefficient shifts in the negative direction. Further more, the X-ray diffraction data reveal that the c-axis lattice constant c0 increases with the decrease of film thickness. These abnormal phenomena can be attributed to the insufficient oxygen reduction in the thin films. Considering the lattice mismatching in the ab-plane between the SrTiO3 substrates and the films, the compressive stress from the substrates may be responsible for the more difficult reduction of the oxygen in the thin films.
We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.
We performed systematic angle-resolved photoemission spectroscopy measurements $in$-$situ$ on $T$-${rm La}_{2-x}{rm Ce}_xrm {CuO}_{4pmdelta}$ (LCCO) thin films over the extended doping range prepared by the refined ozone/vacuum annealing method. Electron doping level ($n$), estimated from the measured Fermi surface volume, varies from 0.05 to 0.23, which covers the whole superconducting dome. We observed an absence of the insulating behavior around $n sim$ 0.05 and the Fermi surface reconstruction shifted to $n sim$ 0.11 in LCCO compared to that of other electron-doped cuprates at around 0.15, suggesting that antiferromagnetism is strongly suppressed in this material. The possible explanation may lie in the enhanced -$t$ /$t$ in LCCO for the largest $rm{La^{3+}}$ ionic radius among all the Lanthanide elements.
Electron correlations play a dominant role in the charge dynamics of the cuprates. We use resonant inelastic x-ray scattering (RIXS) to track the doping dependence of the collective charge excitations in electron doped La$_{2-x}$Ce$_{x}$CuO$_{4}$(LCCO). From the resonant energy dependence and the out-of-plane momentum dependence, the charge excitations are identified as three-dimensional (3D) plasmons, which reflect the nature of the electronic structure and Coulomb repulsion on both short and long length scales. With increasing electron doping, the plasmon excitations show monotonic hardening in energy, a consequence of the electron correlation effect on electron structure near the Fermi surface (FS). Importantly, the plasmon excitations evolve from a broad feature into a well defined peak with much increased life time, revealing the evolution of the electrons from incoherent states to coherent quasi-particles near the FS. Such evolution marks the reduction of the short-range electronic correlation, and thus the softening of the Mottness of the system with increasing electron doping.
We fabricated superconducting MgB2 thin films on (001) MgO substrates. The samples were prepared by magnetron rf and dc co-sputtering on heated substrates. They were annealed ex-situ for one hour at temperatures between 450{deg}C and 750{deg}C. We will show that the substrate temperature during the sputtering process and the post annealing temperatures play a crucial role in forming MgB2 superconducting thin films. We achieved a critical onset temperature of 27.1K for a film thickness of 30nm. The crystal structures were measured by x-ray diffraction.
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