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Register a new userPhoto-Thermoelectric Effect at a Graphene Interface Junction
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We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photo-thermoelectric effect. The PC displays a factor of ~10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T^{1.5} dependence below ~100 K, which agrees with recent theoretical predictions.
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We have tuned in situ the proximity effect in a single graphene layer coupled to two Pt/Ta superconducting electrodes. An annealing current through the device changed the transmission coefficient of the electrode/graphene interface, increasing the probability of multiple Andreev reflections. Repeated annealing steps improved the contact sufficiently for a Josephson current to be induced in graphene.
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An interface electron state at the junction between a three-dimensional topological insulator (TI) film of Bi2Se3 and a ferrimagnetic insulator film of Y3Fe5O12 (YIG) was investigated by measurements of angle-resolved photoelectron spectroscopy and X-ray absorption magnetic circular dichroism (XMCD). The surface state of the Bi2Se3 film was directly observed and localized 3d spin states of the Fe3+ state in the YIG film were confirmed. The proximity effect is likely described in terms of the exchange interaction between the localized Fe 3d electrons in the YIG film and delocalized electrons of the surface and bulk states in the Bi2Se3 film. The Curie temperature (TC) may be increased by reducing the amount of the interface Fe2+ ions with opposite spin direction observable as a pre-edge in the XMCD spectra.
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