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Register a new userPhoto-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors
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Graphenes high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultra-broadband photodetectors. However, the precise mechanism of photodetection is still debated. Here, we report wavelength and polarization dependent measurements of metal-graphene-metal photodetectors. This allows us to quantify and control the relative contributions of both photo-thermo- and photoelectric effects, both contributing to the overall photoresponse. This paves the way for a more efficient photodetector design for ultra-fast operating speeds.
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We investigate the optoelectronic response of a graphene interface junction, formed with bilayer and single-layer graphene, by photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photo-thermoelectric effect. The PC displays a factor of ~10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T^{1.5} dependence below ~100 K, which agrees with recent theoretical predictions.
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