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Register a new userGrowth mode, magnetic and magneto-optical properties of pulsed-laser-deposited Au/Co/Au(111) trilayers
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The growth mode, magnetic and magneto-optical properties of epitaxial Au/Co/Au(111) ultrathin trilayers grown by pulsed-laser deposition (PLD) under ultra-high vacuum are presented. Sapphire wafers buffered with a single-crystalline Mo(110) bilayer were used as substrates. Owing to PLD-induced interfacial intermixing at the lower Co/Au(111) interface, a layer-by-layer growth mode is promoted. Surprisingly, despite this intermixing, ferromagnetic behavior is found at room temperature for coverings starting at 1 atomic layer (AL). The films display perpendicular magnetization with anisotropy constants reduced by 50% compared to TD-grown or electrodeposited films, and with a coercivity more than one order of magnitude lower ($lesssim$ 5 mT). The magneto-optical (MO) response in the low Co thickness range is dominated by Au/Co interface contributions. For thicknesses starting at 3 AL Co, the MO response has a linear dependence with the Co thickness, indicative of a continuous-film-like MO behavior.
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Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented sapphire substrates and, surprisingly, the films are found to be highly oriented along the (103) axis normal to the film plane, rather than the (000l) orientation. Multiple characterization techniques are employed to explore the structural and chemical quality of these films, the electrical and optical properties, and the device functionalities. The 80-nm thick Ti3AlC2 film is highly conducting at room temperature (resistivity of 50 micro ohm-cm), and a very-low-temperature coefficient of resistivity. The ultrathin (2 nm) Ti3AlC2 film has fairly good optical transparency and high conductivity at room temperature (sheet resistance of 735 ohm). Scanning tunneling microscopy reveals the metallic characteristics (with finite density of states at the Fermi level) at room temperature. The metal-semiconductor junction of the p-type Ti3AlC2 film and n-Si show the expected rectification (diode) characteristics, in contrast to the ohmic contact behavior in the case of Ti3AlC2 on p-Si. A triboelectric-nanogenerator-based touch-sensing device, comprising of the Ti3AlC2 film, shows a very impressive peak-to-peak open-circuit output voltage of 80 V. These observations reveal that pulsed laser deposited Ti3AlC2 thin films have excellent potential for applications in multiple domains, such as bottom electrodes, resistors for high-precision measurements, Schottky diodes, ohmic contacts, fairly transparent ultrathin conductors, and next-generation biomechanical touch sensors for energy harvesting.
We present a detailed theoretical investigation on the magnetic properties of small single-layered Fe, Co and Ni clusters deposited on Ir(111), Pt(111) and Au(111). For this a fully relativistic {em ab-initio} scheme based on density functional theory has been used. We analyse the element, size and geometry specific variations of the atomic magnetic moments and their mutual exchange interactions as well as the magnetic anisotropy energy in these systems. Our results show that the atomic spin magnetic moments in the Fe and Co clusters decrease almost linearly with coordination on all three substrates, while the corresponding orbital magnetic moments appear to be much more sensitive to the local atomic environment. The isotropic exchange interaction among the cluster atoms is always very strong for Fe and Co exceeding the values for bulk bcc Fe and hcp Co, whereas the anisotropic Dzyaloshinski-Moriya interaction is in general one or two orders of magnitude smaller when compared to the isotropic one. For the magnetic properties of Ni clusters the magnetic properties can show quite a different behaviour and we find in this case a strong tendency towards noncollinear magnetism.
Chiral domain walls in ultrathin perpendicularly magnetised layers have a N{e}el structure stabilised by a Dzyaloshinskii-Moriya interaction (DMI) that is generated at the interface between the ferromagnet and a heavy metal. Different heavy metals are required above and below a ferromagnetic film in order to generate the structural inversion asymmetry needed to ensure that the DMI arising at the two interfaces does not cancel. Here we report on the magnetic properties of epitaxial Pt/Co/Au$_x$Pt$_{1-x}$ trilayers grown by sputtering onto sapphire substrates with 0.6 nm thick Co. As $x$ rises from 0 to 1 a structural inversion asymmetry is generated. We characterise the epilayer structure with x-ray diffraction and cross-sectional transmission electron microscopy, revealing (111) stacking. The saturation magnetization falls as the proximity magnetisation in Pt is reduced, whilst the perpendicular magnetic anisotropy $K_mathrm{u}$ rises. The micromagnetic DMI strength $D$ was determined using the bubble expansion technique and also rises from a negligible value when $x=0$ to $sim 1$ mJ/m$^2$ for $x = 1$. The depinning field at which field-driven domain wall motion crosses from the creep to the depinning regime rises from $sim 40$ to $sim 70$ mT, attributed to greater spatial fluctuations of the domain wall energy with increasing Au concentration. Meanwhile, the increase in DMI causes the Walker field to rise from $sim 10$ to $sim 280$ mT, meaning that only in the $x = 1$ sample is the steady flow regime accessible. The full dependence of domain wall velocity on driving field bears little resemblance to the prediction of a simple one-dimensional model, but can be described very well using micromagnetic simulations with a realistic model of disorder. These reveal a rise in Gilbert damping as $x$ increases.
We report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer CoO$_2$. The Fermi contour consists of a large hole pocket centered at the $overline{Gamma}$ point. To interpret the ARPES results, we use density functional theory (DFT) in combination with the multi-orbital Gutzwiller Approximation (DFT+GA), basing our calculations on crystalline structure parameters derived from x-ray photoelectron diffraction and low-energy electron diffraction. Our calculations are in good agreement with the measured dispersion. We conclude that the material is a moderately correlated metal. We also discuss substrate effects, and the influence of hydroxylation on the CoO$_2$ single-layer electronic structure.
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS$_2$) epitaxially grown on Au(111). Following the growth process in real time with fast x-ray photoelectron spectroscopy, we obtain a singly-oriented layer by choosing the proper W evaporation rate and substrate temperature during the growth. Information about the morphology, size and layer stacking of the WS$_2$ layer were achieved by employing x-ray photoelectron diffraction and low-energy electron microscopy. The strong spin splitting in the valence band of WS$_2$ coupled with the single-orientation character of the layer make this material the ideal candidate for the exploitation of the spin and valley degrees of freedom.
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