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Register a new userOn-chip nano-manipulation of magnetic particles via domain walls conduits
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The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule labels in several applications - including single molecule manipulation, separation, cells manipulation and biomagnetic sensing, the accurate control over the handling of the single magnetic nanoparticles becomes crucial as it may reflect the handling of the single molecules. The approach described here opens the path to the implementation and design of nano-transport lines, with application to single molecule study and lab-on-chip devices. In perspective, the easy integration on chip with sensors of domain walls and particles will allow for the realization of programmable circuits for molecular manipulation with continuous control of the desired process.
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The manipulation of geometrically constrained magnetic domain walls (DWs) in nanoscale magnetic strips has attracted much interest recently, with proposals for prospective memory and logic devices. Here we propose to use the high controllability of the motion of geometrically constrained DWs for the manipulation of individual nanoparticles on a chip with an active control of position at the nanometer scale. The proposed method exploits the fact that magnetic nanoparticles in solution can be captured by a DW, whose position can be manipulated with nanometric accuracy in a specifically designed magnetic nanowire structure. We show that the high control over DW nucleation, displacement, and annihilation processes in such structures can be used to capture, transport and release magnetic nanoparticles. As magnetic particles with functionalized surfaces are commonly used as molecule carriers or labels, the accurate control over the handling of the single magnetic nanoparticle is crucial for several applications including single molecule manipulation, separation, cells manipulation and biomagnetic sensing.
We investigate numerically the transverse versus vortex phase diagram of head-to-head domain walls in Co/Cu/Py spin valve nano-stripes (Py: Permalloy), in which the Co layer is mostly single domain while the Py layer hosts the domain wall. The range of stability of the transverse wall is shifted towards larger thickness compared to single Py layers, due to a magnetostatic screening effect between the two layers. An approached analytical scaling law is derived, which reproduces faithfully the phase diagram.
Conductive ferroelectric domain walls--ultra-narrow and configurable conduction paths, have been considered as essential building blocks for future programmable domain wall electronics. For applications in high density devices, it is imperative to explore the conductive domain walls in small confined systems while earlier investigations have hitherto focused on thin films or bulk single crystals, noting that the size-confined effects will certainly modulate seriously the domain structure and wall transport. Here, we demonstrate an observation and manipulation of conductive domain walls confined within small BiFeO3 nano-islands aligned in high density arrays. Using conductive atomic force microscopy (CAFM), we are able to distinctly visualize various types of conductive domain walls, including the head-to-head charged walls (CDWs), zigzag walls (zigzag-DWs), and typical 71{deg} head-to-tail neutral walls (NDWs). The CDWs exhibit remarkably enhanced metallic conductivity with current of ~ nA order in magnitude and 104 times larger than that inside domains (0.01 ~ 0.1 pA), while the semiconducting NDWs allow also much smaller current ~ 10 pA than the CDWs. The substantially difference in conductivity for dissimilar walls enables additional manipulations of various wall conduction states for individual addressable nano-islands via electrically tuning of their domain structures. A controllable writing of four distinctive states by applying various scanning bias voltages is achieved, offering opportunities for developing multilevel high density memories.
The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBi$_2$Te$_4$ family and the Dirac semimetal EuMnBi$_2$, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility or net moments inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependences. The direct visualization of domain walls and domain structure in magnetic field will not only facilitate the exploration of intrinsic phenomena in topological antiferromagnets, but also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.
The chirality-dependent magnetoelectric properties of Neel-type domain walls in iron garnet films is observed. The electrically driven magnetic domain wall motion changes the direction to the opposite with the reversal of electric polarity of the probe and with the chirality switching of the domain wall from clockwise to counterclockwise. This proves that the origin of the electric field induced micromagnetic structure transformation is inhomogeneous magnetoelectric interaction.
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