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Intratube quantum dots showing particle-in-a-box-like states with level spacings up to 200meV are realized in metallic single-walled carbon nanotubes by means of low dose medium energy Ar irradiation. Fourier transform scanning tunneling spectroscopy compared to results of a Fabry-Perot electron resonator model yields clear signatures for inter- and intra-valley scattering of electrons confined between consecutive irradiation-induced defects (inter-defects distance < 10nm). Effects arising from lifting the degeneracy of the Dirac cones within the first Brillouin zone are also observed.
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We present experimental data and associated theory for correlations in a series of experiments involving repeated Landau-Zener sweeps through the crossing point of a singlet state and a spin aligned triplet state in a GaAs double quantum dot containing two conduction electrons, which are loaded in the singlet state before each sweep, and the final spin is recorded after each sweep. The experiments reported here measure correlations on time scales from 4 $mu$s to 2 ms. When the magnetic field is aligned in a direction such that spin-orbit coupling cannot cause spin flips, the correlation spectrum has prominent peaks centered at zero frequency and at the differences of the Larmor frequencies of the nuclei, on top of a frequency-independent background. When the spin-orbit field is relevant, there are additional peaks, centered at the frequencies of the individual species. A theoretical model which neglects the effects of high-frequency charge noise correctly predicts the positions of the observed peaks, and gives a reasonably accurate prediction of the size of the frequency-independent background, but gives peak areas that are larger than the observed areas by a factor of two or more. The observed peak widths are roughly consistent with predictions based on nuclear dephasing times of the order of 60 $mu$s. However, there is extra weight at the lowest observed frequencies, which suggests the existence of residual correlations on the scale of 2 ms. We speculate on the source of these discrepancies.
We present a detailed comparison between theoretical predictions on electron scattering processes in metallic single-walled carbon nanotubes with defects and experimental data obtained by scanning tunneling spectroscopy of Ar$^+$ irradiated nanotubes. To this purpose we first develop a formalism for studying quantum transport properties of defected nanotubes in presence of source and drain contacts and an STM tip. The formalism is based on a field theoretical approach describing low-energy electrons. We account for the lack of translational invariance induced by defects within the so called extended kp approximation. The theoretical model reproduces the features of the particle-in-a-box-like states observed experimentally. Further, the comparison between theoretical and experimental Fourier-transformed local density of state maps yields clear signatures for inter- and intra-valley electron scattering processes depending on the tube chirality.
We use time-resolved charge detection techniques to investigate single-electron tunneling in semiconductor quantum dots. The ability to detect individual charges in real-time makes it possible to count electrons one-by-one as they pass through the structure. The setup can thus be used as a high-precision current meter for measuring ultra-low currents, with resolution several orders of magnitude better than that of conventional current meters. In addition to measuring the average current, the counting procedure also makes it possible to investigate correlations between charge carriers. In quantum dots, we find that the strong Coulomb interaction makes electrons try to avoid each other. This leads to electron anti-bunching, giving stronger correlations and reduced noise compared to a current carried by statistically independent electrons. The charge detector is implemented by monitoring changes in conductance in a near-by capacitively coupled quantum point contact. We find that the quantum point contact not only serves as a detector but also causes a back-action onto the measured device. Electron scattering in the quantum point contact leads to emission of microwave radiation. The radiation is found to induce an electronic transition between two quantum dots, similar to the absorption of light in real atoms and molecules. Using a charge detector to probe the electron transitions, we can relate a single-electron tunneling event to the absorption of a single photon. Moreover, since the energy levels of the double quantum dot can be tuned by external gate voltages, we use the device as a frequency-selective single-photon detector operating at microwave energies.
The electronic states of an electrostatically confined cylindrical graphene quantum dot and the electric transport through this device are studied theoretically within the continuum Dirac-equation approximation and compared with numerical results obtained from a tight-binding lattice description. A spectral gap, which may originate from strain effects, additional adsorbed atoms or substrate-induced sublattice-symmetry breaking, allows for bound and scattering states. As long as the diameter of the dot is much larger than the lattice constant, the results of the continuum and the lattice model are in very good agreement. We also investigate the influence of a sloping dot-potential step, of on-site disorder along the sample edges, of uncorrelated short-range disorder potentials in the bulk, and of random magnetic-fluxes that mimic ripple-disorder. The quantum dots spectral and transport properties depend crucially on the specific type of disorder. In general, the peaks in the density of bound states are broadened but remain sharp only in the case of edge disorder.
Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.
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