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Register a new userNew Model System for a One-Dimensional Electron Liquid: Self-Organized Atomic Gold Chains on Ge(001)
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Unique electronic properties of self-organized Au atom chains on Ge(001) in novel c(8x2) long-range order are revealed by scanning tunneling microscopy. Along the nanowires an exceptionally narrow conduction path exists which is virtually decoupled from the substrate. It is laterally confined to the ultimate limit of single atom dimension, and is strictly separated from its neighbors, as not previously reported. The resulting tunneling conductivity shows a dramatic inhomogeneity of two orders of magnitude. The atom chains thus represent an outstandingly close approach to a one-dimensional electron liquid.
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Atomic nanowires formed by Au on Ge(001) are scrutinized for the band topology of the conduction electron system by k-resolved photoemission. Two metallic electron pockets are observed. Their Fermi surface sheets form straight lines without undulations perpendicular to the chains within experimental uncertainty. The electrons hence emerge as strictly confined to one dimension. Moreover, the system is stable against a Peierls distortion down to 10 K, lending itself for studies of the spectral function. Indications for unusually low spectral weight at the chemical potential are discussed.
Atomic structures of quasi-one-dimensional (1D) character can be grown on semiconductor substrates by metal adsorption. Significant progress concerning study of their 1D character has been achieved recently by condensing noble metal atoms on the Ge(001) surface. In particular, Pt and Au yield high quality reconstructions with low defect densities. We reported on the self-organized growth and the long-range order achieved, and present data from scanning tunneling microscopy (STM) on the structural components. For Pt/Ge(001), we find hot substrate growth is the preferred method for self-organization. Despite various dimerized bonds, these atomic wires exhibit metallic conduction at room temperature, as documented by low-bias STM. For the recently discovered Au/Ge(001) nanowires, we have developed a deposition technique that allows complete substrate coverage. The Au nanowires are extremely well separated spatially, exhibit a continuous 1D charge density, and are of solid metallic conductance. In this review we present structural details for both types of nanowires, and discuss similarities and differences. A perspective is given for their potential to host a one-dimensional electron system. The ability to condense different noble metal nanowires demonstrates how atomic control of the structure affects the electronic properties.
We present the exact Bethe Ansatz solution of a multichannel model of one- dimensional correlated electrons coupled antiferromagnetically to a magnetic impurity of arbitrary spin S. The solution reveals that interactions in the bulk make the magnetic impurity drive both spin and charge fluctuations, producing a mixed valence at the impurity site, with an associated effective spin S_eff > S in the presence of a magnetic field. The screening of the impurity spin is controlled by its size independently of the number of channels, in contrast to the multichannel Kondo effect for free electrons.
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800{deg}C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.
We study the one-electron spectral properties of one-dimensional interacting electron systems in which the interactions have finite range. We employ a mobile quantum impurity scheme that describes the interactions of the fractionalized excitations at energies above the standard Tomonga-Luttinger liquid limit and show that the phase shifts induced by the impurity describe universal properties of the one-particle spectral function. We find the explicit forms in terms of these phase shifts for the momentum dependent exponents that control the behavior of the spectral function near and at the (k,omega)-plane singularities where most of the spectral weight is located. The universality arises because the line shape near the singularities is independent of the short-distance part of the interaction potentials. For the class of potentials considered here, the charge fractionalized particles have screened Coulomb interactions that decay with a power-law exponent l>5. We apply the theory to the angle-resolved photo-electron spectroscopy (ARPES) in the highly one-dimensional bismuth-induced anisotropic structure on indium antimonide Bi/InSb(001). Our theoretical predictions agree quantitatively with both (i) the experimental value found in Bi/InSb(001) for the exponent alpha that controls the suppression of the density of states at very small excitation energy omega and (ii) the location in the (k,omega) plane of the experimentally observed high-energy peaks in the ARPES momentum and energy distributions. We conclude with a discussion of experimental properties beyond the range of our present theoretical framework and further open questions regarding the one-electron spectral properties of Bi/InSb(001).
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