No Arabic abstract
Atomic structures of quasi-one-dimensional (1D) character can be grown on semiconductor substrates by metal adsorption. Significant progress concerning study of their 1D character has been achieved recently by condensing noble metal atoms on the Ge(001) surface. In particular, Pt and Au yield high quality reconstructions with low defect densities. We reported on the self-organized growth and the long-range order achieved, and present data from scanning tunneling microscopy (STM) on the structural components. For Pt/Ge(001), we find hot substrate growth is the preferred method for self-organization. Despite various dimerized bonds, these atomic wires exhibit metallic conduction at room temperature, as documented by low-bias STM. For the recently discovered Au/Ge(001) nanowires, we have developed a deposition technique that allows complete substrate coverage. The Au nanowires are extremely well separated spatially, exhibit a continuous 1D charge density, and are of solid metallic conductance. In this review we present structural details for both types of nanowires, and discuss similarities and differences. A perspective is given for their potential to host a one-dimensional electron system. The ability to condense different noble metal nanowires demonstrates how atomic control of the structure affects the electronic properties.
Unique electronic properties of self-organized Au atom chains on Ge(001) in novel c(8x2) long-range order are revealed by scanning tunneling microscopy. Along the nanowires an exceptionally narrow conduction path exists which is virtually decoupled from the substrate. It is laterally confined to the ultimate limit of single atom dimension, and is strictly separated from its neighbors, as not previously reported. The resulting tunneling conductivity shows a dramatic inhomogeneity of two orders of magnitude. The atom chains thus represent an outstandingly close approach to a one-dimensional electron liquid.
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800{deg}C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kOhm/sq. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH$_{2}$ surface diffusion when the C atoms are delivered from CH$_{4}$. The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.
In the framework of ab initio dynamical mean field theory for realistic electronic structure calculations a new perturbation scheme which combine the T-matrix and fluctuating exchange approximations has been proposed. This method is less computationally expensive than numerically exact quantum Monte Carlo technics and give an adequate description of the electronic structure and exchange interactions for magnetic metals. We discuss a simple expression for the exchange interactions corresponding to the neglecting of the vertex corrections which becomes exact for the spin-wave stiffness in the local approximation. Electronic structure, correlation effects and exchange interactions for ferromagnetic nickel have been discussed.
We present the results of calculations for Pu and Am performed using an implementation of self-consistent relativistic GW method. The key feature of our scheme is to evaluate polarizability and self-energy in real space and Matsubaras time. We compare our GW results with the calculations using local density (LDA) and quasiparticle (QP) approximations and also with scalar-relativistic calculations. By comparing our calculated electronic structures with experimental data, we highlight the importance of both relativistic effects and effects of self-consistency in this GW calculation.
Ordered arrays of magnetic nanowires are commonly synthesized by electrodeposition in nanoporous alumina templates. Due to their dense packing, strong magnetostatic interactions prevent the manipulation of wires individually. Using atomic layer deposition we reduce the diameter of the pores prior to electrodeposition. This reduces magnetostatic interactions, yielding fully remanent hysteresis loops. This is a first step towards the use of such arrays for magnetic racetrack memories.