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Register a new userElectronic Griffiths phase of the d=2 Mott transition
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We investigate the effects of disorder within the T=0 Brinkman-Rice (BR) scenario for the Mott metal-insulator transition (MIT) in two dimensions (2d). For sufficiently weak disorder the transition retains the Mott character, as signaled by the vanishing of the local quasiparticles (QP) weights Z_{i} and strong disorder screening at criticality. In contrast to the behavior in high dimensions, here the local spatial fluctuations of QP parameters are strongly enhanced in the critical regime, with a distribution function P(Z) ~ Z^{alpha-1} and alpha tends to zero at the transition. This behavior indicates a robust emergence of an electronic Griffiths phase preceding the MIT, in a fashion surprisingly reminiscent of the Infinite Randomness Fixed Point scenario for disordered quantum magnets.
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We explore the coexistence region in the vicinity of the Mott critical end point employing a compressible cell spin-$1/2$ Ising-like model. We analyze the case for the spin-liquid candidate $kappa$-(BEDT-TTF)$_2$Cu$_2$(CN)$_3$, where close to the Mott critical end point metallic puddles coexist with an insulating ferroelectric phase. Our results are fourfold: $i$) a universal divergent-like behavior of the Gruneisen parameter upon crossing the first-order transition line; $ii$) based on scaling arguments, we show that within the coexistence region, for $any$ system close to the critical point, the relaxation time is entropy-dependent; $iii$) we propose the electric Gruneisen parameter $Gamma_E$, which quantifies the electrocaloric effect; $iv$) we identify the metallic/insulating coexistence region as an electronic Griffiths-like phase. Our findings suggest that $Gamma_E$ governs the dielectric response close to the critical point and that an electronic Griffiths-like phase emerges in the coexistence region.
We report on the emergence of an Electronic Griffiths Phase (EGP) in the doped semiconductor FeSb$_{2}$, predicted for disordered insulators with random localized moments in the vicinity of a metal-insulator transition (MIT). Magnetic, transport, and thermodynamic measurements of Fe(Sb$_{1-x}$Te$_{x}$)$_{2}$ single crystals show signatures of disorder-induced non-Fermi liquid behavior and a Wilson ratio expected for strong electronic correlations. The EGP states are found on the metallic boundary, between the insulating state ($x = 0$) and a long-range albeit weak magnetic order ($x geq 0.075$).
In the vicinity of a quantum critical point, quenched disorder can lead to a quantum Griffiths phase, accompanied by an exotic power-law scaling with a continuously varying dynamical exponent that diverges in the zero-temperature limit. Here, we investigate a nematic quantum critical point in the iron-based superconductor FeSe$_{0.89}$S$_{0.11}$ using applied hydrostatic pressure. We report an unusual crossing of the magnetoresistivity isotherms in the non-superconducting normal state which features a continuously varying dynamical exponent over a large temperature range. We interpret our results in terms of a quantum Griffiths phase caused by nematic islands that result from the local distribution of Se and S atoms. At low temperatures, the Griffiths phase is masked by the emergence of a Fermi liquid phase due to a strong nematoelastic coupling and a Lifshitz transition that changes the topology of the Fermi surface.
We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects, dramatically modify the quantum critical behavior near disordered Mott transitions. The leading critical behavior of quasiparticle wavefunctions is shown to assume a universal form in the full range from weak to strong disorder, in contrast to disorder-driven non-Fermi liquid (electronic Griffiths phase) behavior, which is found only in the strongly correlated regime.
The in-plane and out-of-plane magnetoresistance (MR) of single crystals of La_2CuO_4, lightly doped (x=0.03) with either Sr (La_{2-x}Sr_xCuO_4) or Li (La_2Cu_{1-x}Li_xO_4), have been measured in the fields applied parallel and perpendicular to the CuO_2 planes. Both La_{1.97}Sr_{0.03}CuO_4 and La_2Cu_{0.97}Li_{0.03}O_4 exhibit the emergence of a positive MR at temperatures (T) well below the spin glass (SG) transition temperature T_{sg}, where charge dynamics is also glassy. This positive MR grows as T->0 and shows hysteresis and memory. In this regime, the in-plane resistance R_{ab}(T,B) is described by a scaling function, suggesting that short-range Coulomb repulsion between two holes in the same disorder-localized state plays a key role at low T. The results highlight similarities between this magnetic material and a broad class of well-studied, nonmagnetic disordered insulators.
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