Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14 MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses reduced also the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.
This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.
Solid NH3 and ND3 provide a highly polarizable, radiation resistant source of polarized protons and deuterons and have been used extensively in high luminosity experiments investigating the spin structure of the nucleon. Over the past twenty years, the UVA polarized target group has been instrumental in producing and polarizing much of the material used in these studies, and many practical considerations have been learned in this time. In this discussion, we analyze the polarization performance of the solid ammonia targets used during the recent JLab Eg4 run. Topics include the rate of polarization decay with accumulated charge, the annealing procedure for radiation damaged targets to recover polarization, and the radiation induced change in optimum microwave frequency used to polarize the sample. We also discuss the success we have had in implementing frequency modulation of the polarizing microwave frequency.
An air cargo inspection system combining two nuclear reaction based techniques, namely Fast-Neutron Resonance Radiography and Dual-Discrete-Energy Gamma Radiography is currently being developed. This system is expected to allow detection of standard and improvised explosives as well as special nuclear materials. An important aspect for the applicability of nuclear techniques in an airport inspection facility is the inventory and lifetimes of radioactive isotopes produced by the neutron and gamma radiation inside the cargo, as well as the dose delivered by these isotopes to people in contact with the cargo during and following the interrogation procedure. Using MCNPX and CINDER90 we have calculated the activation levels for several typical inspection scenarios. One example is the activation of various metal samples embedded in a cotton-filled container. To validate the simulation results, a benchmark experiment was performed, in which metal samples were activated by fast-neutrons in a water-filled glass jar. The induced activity was determined by analyzing the gamma spectra. Based on the calculated radioactive inventory in the container, the dose levels due to the induced gamma radiation were calculated at several distances from the container and in relevant time windows after the irradiation, in order to evaluate the radiation exposure of the cargo handling staff, air crew and passengers during flight. The possibility of remanent long-lived radioactive inventory after cargo is delivered to the client is also of concern and was evaluated.
Thin polypropylene (CH$_2$) fibers have been used for internal experiments in storage rings as an option for hydrogen targets. The change of the hydrogen content due to the radiation dose applied by the circulating proton beam has been investigated in the range $1cdot10^6$ to $2cdot10^8$~Gy at beam momenta of 1.5 to 3 GeV/c by comparing the elastic pp-scattering yield to that from inelastic p-carbon reactions. It is found that the loss of hydrogen as a function of applied dose receives contributions from a fast and a slow component.
Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly attractive for resource-constrained missions such as space-based detector applications. However the space radiation environment is known to be particularly harsh on semiconductor devices, where high particle fluences can degrade performance over time. The radiation hardness of a particular SiPM, manufactured by ON Semiconductor (formally SensL), has yet to be studied with high energy protons, which are native to the space radiation environment. To study these effects we have irradiated groups of two SiPMs to four different fluences of 800 MeV protons delivered by the accelerator at the Los Alamos Neutron Science Center. Fluences of $1.68times10^{9}$, $1.73times10^{10}$, $6.91times10^{10}$, and $1.73times10^{11}$ protons cm$^{-2}$, and their corresponding estimated doses of $0.15$, $1.55$, $6.19$, and $15.5$ kRad, were chosen based on estimates of the potential exposure a SiPM might receive during an interplanetary space mission lasting 10 years. We report the effects these doses have on dark current and the self-annealing time.
S. Sanchez Majos
,P. Achenbach
,
.
(2008)
.
"Characterisation of radiation damage in silicon photomultipliers with a Monte Carlo model"
.
Carsten Patrick Achenbach
هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا