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Register a new userRadiation Damage in Polarized Ammonia Solids
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K. Slifer
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Solid NH3 and ND3 provide a highly polarizable, radiation resistant source of polarized protons and deuterons and have been used extensively in high luminosity experiments investigating the spin structure of the nucleon. Over the past twenty years, the UVA polarized target group has been instrumental in producing and polarizing much of the material used in these studies, and many practical considerations have been learned in this time. In this discussion, we analyze the polarization performance of the solid ammonia targets used during the recent JLab Eg4 run. Topics include the rate of polarization decay with accumulated charge, the annealing procedure for radiation damaged targets to recover polarization, and the radiation induced change in optimum microwave frequency used to polarize the sample. We also discuss the success we have had in implementing frequency modulation of the polarizing microwave frequency.
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Measured response functions and low photon yield spectra of silicon photomultipliers (SiPM) were compared to multi-photoelectron pulse-height distributions generated by a Monte Carlo model. Characteristic parameters for SiPM were derived. The devices were irradiated with 14 MeV electrons at the Mainz microtron MAMI. It is shown that the first noticeable damage consists of an increase in the rate of dark pulses and the loss of uniformity in the pixel gains. Higher radiation doses reduced also the photon detection efficiency. The results are especially relevant for applications of SiPM in fibre detectors at high luminosity experiments.
Solid ammonia (NH$_3$) is commonly used as a dynamically polarized proton target for electron and muon scattering cross-section asymmetry measurements. As spin 1$^{+}$ particles, the $^{14}$N nuclei in the target are also polarized and contribute a non-trivial asymmetry background that should be addressed. We describe here a method to extract the nitrogen contribution to the asymmetry, and report the cross-section asymmetries of electron-nitrogen scattering at beam energies of $E=1.7$ GeV and $E=2.2$ GeV, and momentum transfer of $Q^{2}=0.023-0.080$ GeV$^{2}$.
We report on the effects of radiation on the light output of lead tungstate crystals. The crystals were irradiated by pure, intense high energy electron and hadron beams as well as by a mixture of hadrons, neutrons and gammas. The crystals were manufactured in Bogoroditsk, Apatity (both Russia), and Shanghai (China). These studies were carried out at the 70-GeV proton accelerator in Protvino.
The LHCb Vertex Locator (VELO) is a silicon strip detector designed to reconstruct charged particle trajectories and vertices produced at the LHCb interaction region. During the first two years of data collection, the 84 VELO sensors have been exposed to a range of fluences up to a maximum value of approximately $rm{45 times 10^{12},1,MeV}$ neutron equivalent ($rm{1,MeV,n_{eq}}$). At the operational sensor temperature of approximately $-7,^{circ}rm{C}$, the average rate of sensor current increase is $18,upmurm{A}$ per $rm{fb^{-1}}$, in excellent agreement with predictions. The silicon effective bandgap has been determined using current versus temperature scan data after irradiation, with an average value of $E_{g}=1.16pm0.03pm0.04,rm{eV}$ obtained. The first observation of n-on-n sensor type inversion at the LHC has been made, occurring at a fluence of around $15 times 10 ^{12}$ of $1,rm{MeV,n_{eq}}$. The only n-on-p sensors in use at the LHC have also been studied. With an initial fluence of approximately $rm{3 times 10^{12},1,MeV,n_{eq}}$, a decrease in the Effective Depletion Voltage (EDV) of around 25,V is observed, attributed to oxygen induced removal of boron interstitial sites. Following this initial decrease, the EDV increases at a comparable rate to the type inverted n-on-n type sensors, with rates of $(1.43pm 0.16) times 10 ^{-12},rm{V} / , 1 , rm{MeV,n_{eq}}$ and $(1.35pm 0.25) times 10 ^{-12},rm{V} / , 1 , rm{MeV,n_{eq}}$ measured for n-on-p and n-on-n type sensors, respectively. A reduction in the charge collection efficiency due to an unexpected effect involving the second metal layer readout lines is observed.
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