Subscribe to the gold package and get unlimited access to Shamra Academy
Register a new userDamping by slow relaxing rare earth impurities in Ni80Fe20
100
0
0.0
(
0
)
Ask ChatGPT about the research
No Arabic abstract
Doping NiFe by heavy rare earth atoms alters the magnetic relaxation properties of this material drastically. We show that this effect can be well explained by the slow relaxing impurity mechanism. This process is a consequence of the anisotropy of the on site exchange interaction between the 4f magnetic moments and the conduction band. As expected from this model the magnitude of the damping effect scales with the anisotropy of the exchange interaction and increases by an order of magnitude at low temperatures. In addition our measurements allow us to determine the relaxation time of the 4f electrons as a function of temperature.
rate research
Read More
The electronic structures of substitutional rare-earth (RE) impurities in GaAs and cubic GaN are calculated. The total energy is evaluated with the self-interaction corrected local spin density approximation, by which several configurations of the open 4f shell of the rare-earth ion may be investigated. The defects are modelled by supercells of type REGa$_{n-1}$As$_n$, for n=4, 8 and 16. The preferred defect is the rare-earth substituting Ga, for which case the rare-earth valency in intrinsic material is found to be trivalent in all cases except Ce and Pr in GaN. The 3+ --> 2+ f-level is found above the theoretical conduction band edge in all cases and within the experimental gap only for Eu, Tm and Yb in GaAs and for Eu in GaN. The exchange interaction of the rare-earth impurity with the states at both the valence band maximum and the conduction band minimum is weak, one to two orders of magnitude smaller than that of Mn impurities. Hence the coupling strength is insufficient to allow for ferromagnetic ordering of dilute impurities, except at very low temperatures.
We analyse the effects of doping Holmium impurities into the full-Heusler ferromagnetic alloy Co$_2$MnSi. Experimental results, as well as theoretical calculations within Density Functional Theory in the Local Density Approximation plus Hubbard U framework show that the holmium moment is aligned antiparallely to that of the transition metal atoms. According to the electronic structure calculations, substituting Ho on Co sites introduces a finite density of states in the minority spin gap, while substitution on the Mn sites preserves the half-metallic character.
The electronic stopping cross sections (SCS) of Ta and Gd for slow protons have been investigated experimentally. The data are compared to the results for Pt and Au to learn how electronic stopping in transition and rare earth metals correlates with features of the electronic band structures. The extraordinarily high SCS observed for protons in Ta and Gd cannot be understood in terms of a free electron gas model, but are related to the high densities of both occupied and unoccupied electronic states in these metals.
Six high-entropy rare earth tetraborides of the tetragonal UB4-prototyped structure have been successfully synthesized for the first time. The specimens are prepared from elemental precursors via high-energy ball mill and in-situ reactive spark plasma sintering. The sintered specimens are >98% in relative densities without detectable oxide impurities (albeit the presence of minor hexaborides in some compositions). No detectable secondary phase is observed in the composition (Y$_{0.2}$Nd$_{0.2}$Sm$_{0.2}$Gd$_{0.2}$Tb$_{0.2}$)B$_{4}$, which is proven homogeneous at both microscale and nanoscale. The Vickers microhardness are determined to be ~13-15 GPa at a standard indentation load of 9.8 N. A scientifically interesting observation is represented by the anisotropic lattice distortion from the rule-of-mixture averages. This work expands the family of high-entropy ceramics via fabricating a new class of high-entropy borides with a unique tetragonal quasi-layered crystal structure.
The acute sensitivity of the electrical resistance of certain systems to magnetic fields known as extreme magnetoresistance (XMR) has recently been explored in a new materials context with topological semimetals. Exemplified by WTe$_{2}$ and rare earth monopnictide La(Sb,Bi), these systems tend to be non-magnetic, nearly compensated semimetals and represent a platform for large magnetoresistance driven by intrinsic electronic structure. Here we explore electronic transport in magnetic members of the latter family of semimetals and find that XMR is strongly modulated by magnetic order. In particular, CeSb exhibits XMR in excess of $1.6 times 10^{6}$ % at fields of 9 T while the magnetoresistance itself is non-monotonic across the various magnetic phases and shows a transition from negative magnetoresistance to XMR with field above magnetic ordering temperature $T_{N}$. The magnitude of the XMR is larger than in other rare earth monopnictides including the non-magnetic members and follows an non-saturating power law to fields above 30 T. We show that the overall response can be understood as the modulation of conductivity by the Ce orbital state and for intermediate temperatures can be characterized by an effective medium model. Comparison to the orbitally quenched compound GdBi supports the correlation of XMR with the onset of magnetic ordering and compensation and highlights the unique combination of orbital inversion and type-I magnetic ordering in CeSb in determining its large response. These findings suggest a paradigm for magneto-orbital control of XMR and are relevant to the understanding of rare earth-based correlated topological materials.
Log in to be able to interact and post comments
comments
Fetching comments
Sign in to be able to follow your search criteria
